Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 μm gate length MOS transistors von Sakalas, P., Zirath, H.G., Litwin, A., Schroter, M., Matulionis, A.

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Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 [mu]m gate length MOS transistors von Sakalas, P, Zirath, H.G, Litwin, A, Schroter, M, Matulionis, A

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Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 /spl mu/m gate length MOS transistors von Sakalas, P., Zirath, H.G., Litwin, A., Schroter, M., Matulionis, A.

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Novel single device balanced resistive HEMT mixers von Yhland, K., Rorsman, N., Zirath, H.H.G.

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A 40-GHz integrated quasi-optical slot HFET mixer von Zirath, H.H.G., Chen-Yu Chi, Rorsman, N., Rebeiz, G.M.

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Broad-Band Noise Mechanisms and Noise Measurements of Metal Semiconductor Junctions von Jelenski, A., Kollberg, E.L., Zirath, H.H.G.

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Temperature variable noise and electrical characteristics of Au-GaAs Schottky barrier millimeter-wave mixer diodes von ZIRATH, H. H. G, NILSEN, S. M, HJELMGREN, H, RAMBERG, L. P, KOLLBERG, E. L

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A Cryogenic Millimeter-wave Schottky-diode Mixer von Kollberg, E.L., Zirath, H.H.C.

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