On the specific on-resistance of high-voltage and power devices von Zingg, R.P.

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Three-dimensional stacked MOS transistors by localized silicon epitaxial overgrowth von Zingg, R.P., Friedrich, J.A., Neudeck, G.W., Hofflinger, B.

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First MOS transistors on insulator by silicon saturated liquid solution epitaxy von Zingg, R.P., Nagel, N., Bergmann, R., Bauser, E., Hofflinger, B., Queisser, H.J.

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New benchmark for RESURF, SOI and super-junction power devices von Zingg, R.P.

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Modular silicon-on-insulator process for power devices and power integrated circuits von Zingg, R.P., Bonne, R.

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850 V DMOS-switch in silicon on-insulator with specific R/sub on/ of 13 /spl Omega/-mm/sup 2 von Zingg, R.P., Weijland, I., Van Zwol, H., Boos, P., Lavrijsen, T., Schoenmakers, T.

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A one-dimensional analytical model for the dual-gate-controlled thin-film SOI MOSFET von Schubert, M., Hofflinger, B., Zingg, R.P.

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Novel fabrication technique for dual-gate MOS transistors von Zingg, R.P., Hoefflinger, B.

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An analytical model for strongly inverted and accumulated silicon films von Schubert, M., Höfflinger, B., Zingg, R.P.

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High-quality stacked CMOS inverter von Zingg, R.P., Hofflinger, B., Neudeck, G.W.

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1D modeling of SOI MOSFETs using distinct quasi-fermi potentials von Schubert, M., Höfflinger, B., Schroeder, D., Zingg, R.P.

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Investigation of threshold-voltage models for thin-film SOI MOSFETs von Schubert, M., Hofflinger, B., Zingg, R.P.

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A new analytical charge model for the dual-gate controlled thin-film SOI MOSFET von Schubert, M., Höfflinger, B., Zingg, R.P.

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Stacked CMOS inverter with symmetric device performance von Zingg, R.P., Hofflinger, B., Neudeck, G.W.

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The concept of negative hamaker coefficients. III. Determination of the surface tension of small particles von Neuman, A.W., Visser, J., Smith, R.P., Omenyi, S.N., Francis, D.W., Spelt, J.K., Vargha-Butler, E.B., Zingg, W., van Oss, C.J., Absolom, D.R.

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