Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate von Liebich, S., Zimprich, M., Beyer, A., Lange, C., Franzbach, D. J., Chatterjee, S., Hossain, N., Sweeney, S. J., Volz, K., Kunert, B., Stolz, W.

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Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing von Woscholski, R., Shakfa, M.K., Gies, S., Wiemer, M., Rahimi-Iman, A., Zimprich, M., Reinhard, S., Jandieri, K., Baranovskii, S.D., Heimbrodt, W., Volz, K., Stolz, W., Koch, M.

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Annealing effects on the composition and disorder of Ga(N,As,P) quantum wells on silicon substrates for laser application von Gies, S., Zimprich, M., Wegele, T., Kruska, C., Beyer, A., Stolz, W., Volz, K., Heimbrodt, W.

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Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures von Jandieri, K., Shakfa, M. K., Liebich, S., Zimprich, M., Kunert, B., Karcher, C., Chernikov, A., Volz, K., Stolz, W., Koch, M., Chatterjee, S., Heimbrodt, W., Gebhard, F., Baranovskii, S. D.

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Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE von HOSSAIN, N, SWEENEY, S. J, ROGOWSKY, S, OSTENDORF, R, WAGNER, J, LIEBICH, S, ZIMPRICH, M, VOLZ, K, KUNERT, B, STOLZ, W

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Compositional disorder anomalies in Ga(N,P,As)/GaP quantum well structures von Jandieri, K, Baranovskii, S D, Kunert, B, Zimprich, M, Liebich, S, Volz, K, Stolz, W, Chatterjee, S, Karcher, C, Heimbrodt, W, Gebhard, F

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Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures von Karcher, C., Jandieri, K., Kunert, B., Fritz, R., Zimprich, M., Volz, K., Stolz, W., Gebhard, F., Baranovskii, S. D., Heimbrodt, W.

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MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates von Liebich, S., Sweeney, S.J., Zimprich, M., Ludewig, P., Beyer, A., Volz, K., Stolz, W., Kunert, B., Hossain, N., Jin, S.R.

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Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers von Hossain, N., Jin, S. R., Liebich, S., Zimprich, M., Volz, K., Kunert, B., Stolz, W., Sweeney, S. J.

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High room-temperature optical gain in Ga(NAsP)/Si heterostructures von Koukourakis, N., Bückers, C., Funke, D. A., Gerhardt, N. C., Liebich, S., Chatterjee, S., Lange, C., Zimprich, M., Volz, K., Stolz, W., Kunert, B., Koch, S. W., Hofmann, M. R.

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Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE von Hossain, N, Sweeney, S J, Rogowsky, S, Ostendorf, R, Wagner, J, Liebich, S, Zimprich, M, Volz, K, Kunert, B, Stolz, W

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Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate von Jandieri, K., Kunert, B., Liebich, S., Zimprich, M., Volz, K., Stolz, W., Gebhard, F., Baranovskii, S. D., Koukourakis, N., Gerhardt, N. C., Hofmann, M. R.

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Electrical pumped integrated III/V laser lattice-matched to a Silicon substrate von Kunert, B., Liebich, S., Zimprich, M., Beyer, A., Ziegler, S., Volz, K., Stolz, W., Hossain, N., Jin, S. R., Sweeney, S. J.

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Modal gain and time-resolved photoluminescence of Ga(NAsP) heterostructures pseudomorphically grown on silicon (001) substrate von Koukourakis, Nektarios, Funke, Dominic A., Gerhardt, Nils C., Hofmann, Martin R., Kunert, B., Liebich, S., Trusheim, D., Zimprich, M., Buckers, C., Koch, S. W., Volz, K., Stolz, W.

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Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate von Jandieri, K, Kunert, B, Liebich, S, Zimprich, M, Volz, K, Stolz, W, Gebhard, F, Baranovskii, S D, Koukourakis, N, Gerhardt, N C, Hofmann, M R

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Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon von Hossain, N., Jin, S. R., Sweeney, S. J., Liebich, S., Ludewig, P., Zimprich, M., Volz, K., Kunert, B., Stolz, W.

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Time-resolved photoluminescence and optical gain of Ga(NAsP) heterostructures pseudomorphically grown on silicon (001) substrate von Gerhardt, N. C., Koukourakis, N., Klimasch, M., Funke, D. A., Hofmann, M. R., Kunert, B., Liebich, S., Trusheim, D., Zimprich, M., Volz, K., Stolz, W.

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Lasing of the III/V compound semiconductor Ga(NAsP) integrated lattice-matched to Si substrate von Kunert, B., Liebich, S., Zimprich, M., Zinnkann, S., Fritz, R., Volz, K., Stolz, W., Lange, C., Koster, N.S., Chatterjee, S., Ruhle, W.W., Gerhardt, N.C., Koukourakis, N., Hofmann, M.

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Hereditary spastic paraplegia caused by compound heterozygous mutations outside the motor domain of the KIF1A gene von Krenn, M., Zulehner, G., Hotzy, C., Rath, J., Stogmann, E., Wagner, M., Haack, T. B., Strom, T. M., Zimprich, A., Zimprich, F.

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Genotype‐guided diagnostic reassessment after exome sequencing in neuromuscular disorders: experiences with a two‐step approach von Krenn, M., Tomschik, M., Rath, J., Cetin, H., Grisold, A., Zulehner, G., Milenkovic, I., Stogmann, E., Zimprich, A., Strom, T. M., Meitinger, T., Wagner, M., Zimprich, F.

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