Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell von Kenzhaev, Z. T., Zikrillaev, N. F., Odzhaev, V. B., Ismailov, K. A., Prosolovich, V. S., Zikrillaev, Kh. F., Koveshnikov, S. V.

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Influence of uniaxial compression on the photoconductivity of highly compensated Si〈B, Mn von Bakhadyrkhanov, M. K., Iliev, Kh. M., Zikrillaev, Kh. F.

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Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon von Zikrillaev, N. F., Koveshnikov, S. V., Turekeev, Kh. S., Norkulov, N., Tachilin, S. A.

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Erratum to: Composition of Silicon Alloyed with Gallium and Phosphorus Atoms von Zikrillaev, N. F., Koveshnikov, S. V., Turekeev, Kh. S., Ismaylov, B. K.

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Negative magnetoresistance in silicon doped with manganese von Zikrillaev, N. F., Iliev, Kh. M., Mavlonov, G. Kh, Isamov, S. B., Madjitov, M. Kh

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Codiffusion of Gallium and Phosphorus Atoms in Silicon von Zikrillaev, N. F., Isamov, S. B., Koveshnikov, S. V., Kenzhaev, Z. T., Turekeev, Kh. S.

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Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon von Zikrillaev, N. F., Shoabdurakhimova, M. M., Kurbanova, U. Kh, Narkulov, N., Shakarov, F. K.

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Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms von Bakhadirkhanov, M. K., Isamov, S. B., Zikrillaev, N. F., Iliev, Kh. M., Mavlonov, G. Kh, Koveshnikov, S. V., Ibodullaev, Sh. N.

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Ferromagnetic states of p-type silicon doped with Mn von Yunusov, Z. A., Yuldashev, Sh. U., Igamberdiev, Kh. T., Kwon, Y. H., Kang, T. W., Bakhadyrkhanov, M. K., Isamov, S. B., Zikrillaev, N. F.

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Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S von Bakhadyrkhanov, M. K., Kurbanova, U. Kh, Zikrillaev, N. F.

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Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese von Bakhadyrkhanov, M. K., Azimkhuzhaev, Kh, Zikrillaev, N. F., Sabdullaev, A. B., Arzikulov, É.

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