Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor von Kozlova, N.V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q.D., Krier, A., Patanè, A.

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Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy von Zhuang, Q. D, Anyebe, Ezekiel A, Chen, R, Liu, H, Sanchez, Ana M, Rajpalke, Mohana K, Veal, Tim D, Wang, Z. M, Huang, Y. Z, Sun, H. D

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Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics von Zhuang, Q D, Alradhi, H, Jin, Z M, Chen, X R, Shao, J, Chen, X, Sanchez, Ana M, Cao, Y C, Liu, J Y, Yates, P, Durose, K, Jin, C J

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Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots von Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., Molina, S. I.

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GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer von Kamarudin, M Ahmad, Hayne, M, Zhuang, Q D, Kolosov, O, Nuytten, T, Moshchalkov, V V, Dinelli, F

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Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots von Chang, Y C, Robson, A J, Harrison, S, Zhuang, Q D, Hayne, M

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Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor von Kozlova, N.V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q.D., Krier, A., Patanè, A.

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GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells von Hodgson, P. D., Hayne, M., Robson, A. J., Zhuang, Q. D., Danos, L.

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Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors von Anyebe, Ezekiel A., Sandall, I., Jin, Z. M., Sanchez, Ana M., Rajpalke, Mohana K., Veal, Timothy D., Cao, Y. C., Li, H. D., Harvey, R., Zhuang, Q. D.

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Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP von Wheatley, R., Kesaria, M., Mawst, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. D., Krier, A.

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Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures von Hodgson, P. D., Young, R. J., Ahmad Kamarudin, M., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M., Hayne, M.

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Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings von Hodgson, P. D., Young, R. J., Kamarudin, M. Ahmad, Zhuang, Q. D., Hayne, M.

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Surfactant effect of antimony addition to the morphology of self-catalyzed InAS1-xSbx nanowires von Anyebe, E. A., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M., Zhuang, Q. D.

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Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction von Yuan, K., Radhakrishnan, K., Zheng, H.Q., Zhuang, Q.D., Ing, G.I.

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Peculiarities of the hydrogenated In(AsN) alloy von Birindelli, S, Kesaria, M, Giubertoni, D, Pettinari, G, Velichko, A V, Zhuang, Q D, Krier, A, Patanè, A, Polimeni, A, Capizzi, M

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Hydrogenation of GaSb/GaAs quantum rings von Hodgson, P. D., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q. D., Birindelli, S., Capizzi, M.

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Nonresonant hydrogen dopants in In(AsN): A route to high electron concentrations and mobilities von Kozlova, N. V., Pettinari, G., Makarovsky, O., Mori, N., Polimeni, A., Capizzi, M., Zhuang, Q. D., Krier, A., Patanè, A.

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Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires von Anyebe, E. A., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M., Zhuang, Q. D.

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An Impedance-Based Approach for Rods With Shear-Type Damping Layer Treatment von Wang, P. W, Zhuang, D. Q

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Strain enhancement during annealing of GaAsN alloys von Zhuang, Q. D., Krier, A., Stanley, C. R.

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