Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing von Kumar, Pratik, Zhu, Kaichen, Gao, Xu, Wang, Sui-Dong, Lanza, Mario, Thakur, Chetan Singh

Volltext

Electroforming in Metal-Oxide Memristive Synapses von Wang, Tao, Shi, Yuanyuan, Puglisi, Francesco Maria, Chen, Shaochuan, Zhu, Kaichen, Zuo, Ying, Li, Xuehua, Jing, Xu, Han, Tingting, Guo, Biyu, Bukvišová, Kristýna, Kachtík, Lukáš, Kolíbal, Miroslav, Wen, Chao, Lanza, Mario

Volltext

Characterizing ABS–copper chemistry-dependent adhesion: From the atomic to macro level von Tao, Ran, Vovusha, Hakkim, Li, Xiaole, Melentiev, Ruslan, Zhu, Kaichen, Lanza, Mario, Schwingenschlögl, Udo, Tevtia, Amit K., Lubineau, Gilles

Volltext

Memristors with Initial Low‐Resistive State for Efficient Neuromorphic Systems von Zhu, Kaichen, Mahmoodi, Mohammad Reza, Fahimi, Zahra, Xiao, Yiping, Wang, Tao, Bukvišová, Kristýna, Kolíbal, Miroslav, Roldan, Juan B., Perez, David, Aguirre, Fernando, Lanza, Mario

Volltext

Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect von Shen, Yaqing, Zheng, Wenwen, Zhu, Kaichen, Xiao, Yiping, Wen, Chao, Liu, Yingwen, Jing, Xu, Lanza, Mario

Volltext

Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study von Li, Xuehua, Zanotti, Tommaso, Wang, Tao, Zhu, Kaichen, Puglisi, Francesco Maria, Lanza, Mario

Volltext

All-2D materials-based 1T1M cells with threshold switching for electronic neurons von Yuan, Bin, Zhu, Kaichen, Han, Tingting, Pazos, Sebastian, Lanza, Mario

Volltext

The development of integrated circuits based on two-dimensional materials von Zhu, Kaichen, Wen, Chao, Aljarb, Areej A., Xue, Fei, Xu, Xiangming, Tung, Vincent, Zhang, Xixiang, Alshareef, Husam N., Lanza, Mario

Volltext

Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology von Zheng, Wenwen, Saiz, Fernan, Shen, Yaqing, Zhu, Kaichen, Liu, Yingwen, McAleese, Clifford, Conran, Ben, Wang, Xiaochen, Lanza, Mario

Volltext

Hybrid 2D–CMOS microchips for memristive applications von Zhu, Kaichen, Pazos, Sebastian, Aguirre, Fernando, Shen, Yaqing, Yuan, Yue, Zheng, Wenwen, Alharbi, Osamah, Villena, Marco A., Fang, Bin, Li, Xinyi, Milozzi, Alessandro, Farronato, Matteo, Muñoz-Rojo, Miguel, Wang, Tao, Li, Ren, Fariborzi, Hossein, Roldan, Juan B., Benstetter, Guenther, Zhang, Xixiang, Alshareef, Husam N., Grasser, Tibor, Wu, Huaqiang, Ielmini, Daniele, Lanza, Mario

Volltext

Integration of Ag-based threshold switching devices in silicon microchips von Alharbi, Osamah, Pazos, Sebastian, Zhu, Kaichen, Aguirre, Fernando, Yuan, Yue, Li, Xinyi, Wu, Huaqiang, Lanza, Mario

Volltext

Optimization of Memristors for Information Storage and Neuromorphic Computing von Zhu, Kaichen

Volltext bestellen

Optimization of Memristors for Information Storage and Neuromorphic Computing von Zhu, Kaichen

Volltext bestellen

Standards for the Characterization of Endurance in Resistive Switching Devices von Lanza, Mario, Waser, Rainer, Ielmini, Daniele, Yang, J. Joshua, Goux, Ludovic, Suñe, Jordi, Kenyon, Anthony Joseph, Mehonic, Adnan, Spiga, Sabina, Rana, Vikas, Wiefels, Stefan, Menzel, Stephan, Valov, Ilia, Villena, Marco A, Miranda, Enrique, Jing, Xu, Campabadal, Francesca, Gonzalez, Mireia B, Aguirre, Fernando, Palumbo, Felix, Zhu, Kaichen, Roldan, Juan Bautista, Puglisi, Francesco Maria, Larcher, Luca, Hou, Tuo-Hung, Prodromakis, Themis, Yang, Yuchao, Huang, Peng, Wan, Tianqing, Chai, Yang, Pey, Kin Leong, Raghavan, Nagarajan, Dueñas, Salvador, Wang, Tao, Xia, Qiangfei, Pazos, Sebastian

Volltext

Graphene–Boron Nitride–Graphene Cross-Point Memristors with Three Stable Resistive States von Zhu, Kaichen, Liang, Xianhu, Yuan, Bin, Villena, Marco A, Wen, Chao, Wang, Tao, Chen, Shaochuan, Hui, Fei, Shi, Yuanyuan, Lanza, Mario

Volltext

Advanced Data Encryption ​using 2D Materials von Wen, Chao, Li, Xuehua, Zanotti, Tommaso, Puglisi, Francesco Maria, Shi, Yuanyuan, Saiz, Fernan, Antidormi, Aleandro, Roche, Stephan, Zheng, Wenwen, Liang, Xianhu, Hu, Jiaxin, Duhm, Steffen, Roldan, Juan B., Wu, Tianru, Chen, Victoria, Pop, Eric, Garrido, Blas, Zhu, Kaichen, Hui, Fei, Lanza, Mario

Volltext

Fully 2D Materials‐Based Resistive Switching Circuits for Advanced Data Encryption von Han, Tingting, Aguirre, Fernando, Zhu, Kaichen, Yuan, Bin, Pazos, Sebastian, Zhang, Nan, Wang, Sui‐Dong, Li, Shaojuan, Lanza, Mario

Volltext

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors von Pazos, Sebastian, Becker, Thales, Villena, Marco Antonio, Zheng, Wenwen, Shen, Yaqing, Yuan, Yue, Alharbi, Osamah, Zhu, Kaichen, Roldán, Juan Bautista, Wirth, Gilson, Palumbo, Felix, Lanza, Mario

Volltext

An Electrical Model for Trap Coupling Effects on Random Telegraph Noise von Becker, Thales, Li, Xuehua, Alves, Pedro, Wang, Tao, Zhu, Kaichen, Xiao, Yiping, Wirth, Gilson, Lanza, Mario

Volltext

The origin and mitigation of defects induced by metal evaporation in 2D materials von Zheng, Wenwen, Yuan, Bin, Villena, Marco A., Zhu, Kaichen, Pazos, Sebastian, Shen, Yaqing, Yuan, Yue, Ping, Yue, Liu, Chen, Zhang, Xiaowen, Zhang, Xixiang, Lanza, Mario

Volltext