Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests von Zhou, Xintian, Su, Hongyuan, Wang, Yan, Yue, Ruifeng, Dai, Gang, Li, Juntao

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4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure von Zhou, Xintian, Yue, Ruifeng, Zhang, Jian, Dai, Gang, Li, Juntao, Wang, Yan

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SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance von Zhou, Xintian, Gong, Hao, Jia, Yunpeng, Hu, Dongqing, Wu, Yu, Xia, Tian, Pang, Haoyang, Zhao, Yuanfu

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A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode von Li, Xinyu, Jia, Yunpeng, Zhou, Xintian, Zhao, Yuanfu, Wu, Yu, Hu, Dongqing, Fang, Xingyu, Deng, Zhonghan

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A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility von Zhou, Xintian, Jia, Yunpeng, Hu, Dongqing, Wu, Yu

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Pathogenic bacteria and fungi in bioaerosols from specialized hospitals in Shandong province, East China von Chen, Lei, Song, Zhicheng, Zhou, Xintian, Yang, Guiwen, Yu, Guanliu

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A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses von Zhou, Xintian, Su, Hongyuan, Yue, Ruifeng, Dai, Gang, Li, Juntao, Wang, Yan, Yu, Zhiping

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SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness von Zhou, Xintian, Zhang, Shida, Li, Mingwei, Jia, Yunpeng, Hu, Dongqing, Wu, Yu, Zhao, Yuanfu

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SiC Double-Trench MOSFETs With Embedded MOS-Channel Diode von Zhou, Xintian, Pang, Haoyang, Jia, Yunpeng, Hu, Dongqing, Wu, Yu, Tang, Yun, Xia, Tian, Gong, Hao, Zhao, Yuanfu

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Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process von Li, Xinyu, Jia, Yunpeng, Zhou, Xintian, Zhao, Yuanfu, Wang, Liang, Li, Tongde, Fang, Xingyu, Jia, Guo, Deng, Zhonghan

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Simulation study on single-event burnout of 550 V double RESURF SOI Lateral IGBT von Zhao, Chongning, Hu, Dongqing, Zheng, Yuechao, Jia, Yunpeng, Zhou, Xintian, Wu, Yu, Tang, Yun

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Single-Event Effects in SiC Double-Trench MOSFETs von Zhou, Xintian, Tang, Yun, Jia, Yunpeng, Hu, Dongqing, Wu, Yu, Xia, Tian, Gong, Hao, Pang, Haoyang

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Degradation of Radiation-Hardened Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor During Gamma Ray Irradiation Performed After Heavy Ion Striking von Li, Xinyu, Jia, Yunpeng, Zhou, Xintian, Zhao, Yuanfu, Tang, Yun, Li, Yuan, Liu, Guanghai, Jia, Guo

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Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike von Zhou, Xintian, Pang, Haoyang, Jia, Yunpeng, Hu, Dongqing, Wu, Yu, Zhang, Shida, Li, Yuan, Li, Xinyu, Wang, Lihao, Fang, Xingyu, Zhao, Yuanfu

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Degradation in super-junction MOSFET under successive exposure of heavy ion strike and gamma ray irradiation von Li, Xinyu, Jia, Yunpeng, Zhou, Xintian, Zhao, Yuanfu, Fang, Xingyu, Wang, Liang, Jia, Guo, Deng, Zhonghan

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Gate Bias Dependence of VTH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests von Li, Yuan, Zhou, Xintian, Zhao, Yuanfu, Jia, Yunpeng, Hu, Dongqing, Wu, Yu, Zhang, Liqi, Chen, Zibo, Huang, Alex Q.

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Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs von Wang, Lihao, Jia, Yunpeng, Zhou, Xintian, Zhao, Yuanfu, Wang, Liang, Li, Tongde, Hu, Dongqing, Wu, Yu, Deng, Zhonghan

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Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance von Wang, Lihao, Jia, Yunpeng, Zhou, Xintian, Zhao, Yuanfu, Hu, Dongqing, Wu, Yu, Deng, Zhonghan

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Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress von Wang, Lihao, Jia, Yunpeng, Zhou, Xintian, Zhao, Yuanfu, Hu, Dongqing, Wu, Yu, Wang, Liang, Li, Tongde, Deng, Zhonghan

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SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness von Wang, Lihao, Jia, Yunpeng, Zhou, Xintian, Zhao, Yuanfu, Wang, Liang, Hu, Dongqing, Wu, Yu, Deng, Zhonghan

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