Enhancement of light extraction from light emitting diodes von Zhmakin, A.I.

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Simulation of visible and ultra-violet group-III nitride light emitting diodes von Bulashevich, K.A., Mymrin, V.F., Karpov, S.Yu, Zhmakin, I.A., Zhmakin, A.I.

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Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals von Evstratov, I.Yu, Kalaev, V.V., Zhmakin, A.I., Makarov, Yu.N., Abramov, A.G., Ivanov, N.G., Smirnov, E.M., Dornberger, E., Virbulis, J., Tomzig, E., von Ammon, W.

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Numerical study of SiC CVD in a vertical cold-wall reactor von Vorob'ev, A.N., Karpov, S.Yu, Bogdanov, M.V., Komissarov, A.E., Bord, O.V., Zhmakin, A.I., Makarov, Yu.N.

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Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth von Bogdanov, M.V., Galyukov, A.O., Karpov, S.Yu, Kulik, A.V., Kochuguev, S.K., Ofengeim, D.Kh, Tsiryulnikov, A.V., Ramm, M.S., Zhmakin, A.I., Makarov, Yu.N.

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Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth von Evstratov, I.Yu, Kalaev, V.V., Zhmakin, A.I., Makarov, Yu.N., Abramov, A.G., Ivanov, N.G., Korsakov, A.B., Smirnov, E.M., Dornberger, E., Virbulis, J., Tomzig, E., von Ammon, W.

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Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface von Evstratov, I.Yu, Kalaev, V.V, Nabokov, V.N, Zhmakin, A.I, Makarov, Yu.N, Abramov, A.G, Ivanov, N.G, Rudinsky, E.A, Smirnov, E.M, Lowry, S.A, Dornberger, E, Virbulis, J, Tomzig, E, Ammon, W.v

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Variations of solid–liquid interface in the BGO low thermal gradients Cz growth for diffuse and specular crystal side surface von Yuferev, V.S., Budenkova, O.N., Vasiliev, M.G., Rukolaine, S.A., Shlegel, V.N., Vasiliev, Ya.V., Zhmakin, A.I.

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Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide von Vorob'ev, A.N, Karpov, S.Yu, Zhmakin, A.I, Lovtsus, A.A, Makarov, Yu.N, Krishnan, A

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Numerical simulation of low-Mach number gas mixture flows with heat and mass transfer using unstructured grids von Egorov, Yu.E., Zhmakin, A.I.

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Modeling of silicon carbide chemical vapor deposition in a vertical reactor von Vorob’ev, A.N., Egorov, Yu.E., Makarov, Yu.N., Zhmakin, A.I., Galyukov, A.O., Rupp, R.

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Transport phenomena in sublimation growth of SiC bulk crystals von Segal, A.S, Vorob’ev, A.N, Karpov, S.Yu, Makarov, Yu.N, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A, Zhmakin, A.I

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Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals von Bord, O.V., Karpov, S.Yu, Makarov, Yuri, Zhmakin, A.I., Karpov, D.S., Ramm, M.S.

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Modeling of gas phase nucleation during silicon carbide chemical vapor deposition von Vorob'ev, A.N., Karpov, S.Yu, Bord, O.V., Zhmakin, A.I., Lovtsus, A.A., Makarov, Yu.N.

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Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition von Vorob’ev, A.N, Komissarov, A.E, Segal, A.S, Makarov, Yu.N, Karpov, S.Yu, Zhmakin, A.I, Rupp, R

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Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization von Ofengeim, D.Kh, Zhmakin, I.A., Tsiryulnikov, A.V., Makarov, Yuri, Komissarov, A.E., Serkov, A.M., Bord, O.V., Kochuguev, S.K., Karpov, S.Yu, Zhmakin, A.I., Ramm, M.S., Bogdanov, M.V., Galyukov, A.O., Kulik, A.V.

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Influence of Coriolis force on thermal convection and impurity segregation during crystal growth under microgravity von Kolesnikova, E.N., Polovko, Yu.A., Yuferev, V.S., Zhmakin, A.I.

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Modeling Analysis of SiC CVD in a Planetary Reactor von Zhmakin, A.I., Heuken, M., Vorob'ev, A.N., Semennikov, A.K., Jürgensen, H., Makarov, Yuri, Dauelsberg, M., Wischmeyer, Frank

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On the flow regimes in VPE reactors von Makarov, Yu.N., Zhmakin, A.I.

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Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container von Roenkov, A.D., Gurevich, S.G., Egorov, Yu.E., Zhmakin, A.I., Ramm, M.S., Segal, A.S., Vorob'ev, A.N., Mokhov, E.N., Vodakov, Yu.A., Makarov, Yuri, Galyukov, A.O., Ramm, M.G.

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