Local thermoelectric effects in wide-gap semiconductors von Ordin, S. V., Zhilyaev, Yu. V., Zelenin, V. V., Panteleev, V. N.

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Resistance formation mechanisms for contacts to n -GaN and n -AlN with high dislocation density von Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Zhilyaev, Yu. V., Klad'ko, V. P., Konakova, R. V., Kudryk, Ya. Ya, Panteleev, V. N., Sheremet, V. N.

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Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density von Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Zhilyaev, Yu. V., Kapitanchuk, L. M., Klad’ko, V. P., Konakova, R. V., Kudryk, Ya. Ya, Naumov, A. V., Panteleev, V. N., Sheremet, V. N.

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The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system von Zhilyaev, Yu. V., Zelenin, V. V., Orlova, T. A., Panteleev, V. N., Poletaev, N. K., Rodin, S. N., Snytkina, S. A.

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Epitaxy of gallium nitride in semi-polar direction on silicon von Bessolov, V. N., Zhilyaev, Yu. V., Konenkova, E. V., Poletaev, N. K., Sharofidinov, Sh, Shcheglov, M. P.

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Chloride vapor-phase epitaxy of gallium nitride at a reduced source temperature von Zhilyaev, Yu. V., Rodin, S. N.

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Prolonged decay of free-to-bound photoluminescence in direct band gap InGaAs and AlGaAs alloys: magnetic resonance studies von Nickolaenko, A E, Gilinsky, A M, Zhuravlev, K S, Shegai, O A, Shamirzaev, T S, Bakarov, A K, Zhilyaev, Yu V, Fedorov, L M

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Photoreflectance characterization of gallium arsenide von Komkov, O. S., Pikhtin, A. N., Zhilyaev, Yu. V.

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Space-and-time current spectroscopy of GaAs-based detectors von Sokolov, Igor A., Bryushinin, Mikhail A., Petrov, Alexander A., Zhilyaev, Yu. V.

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GaAs p-i-n structures for X-ray detectors grown on Ge and GaAs substrates von Zhilyaev, Yu. V., Mikulik, D. I., Nasonov, A. V., Orlova, T. A., Panteleev, V. N., Poletaev, N. K., Fedorov, L. M., Shcheglov, M. P.

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High-temperature gallium phosphide dynistors von Zhilyaev, Yu. V., Panyutin, E. A., Fedorov, L. M.

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Determination of the free carrier concentration in ultra-pure GaAs epilayers by a photoreflectance technique von Komkov, O. S., Pikhtin, A. N., Zhilyaev, Yu. V., Fedorov, L. M.

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GaAs P-I-N structures as detectors of x-ray radiation von Fedorov, L M, Mikulik, D I, Orlova, T A, Panteleev, N K, Poletaev, N A, Snytkina, C A, Zhilyaev, Yu V

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Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology von Bessolov, V. N., Zhilyaev, Yu. V., Konenkova, E. V., Sorokin, L. M., Feoktistov, N. A., Sharofidinov, Sh, Shcheglov, M. P., Kukushkin, S. A., Mets, L. I., Osipov, A. V.

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Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer von Aksyanov, I. G., Bessolov, V. N., Zhilyaev, Yu. V., Kompan, M. E., Konenkova, E. V., Kukushkin, S. A., Osipov, A. V., Rodin, S. N., Feoktistov, N. A., Sharofidinov, Sh, Shcheglov, M. P.

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Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon von Konenkova, E. V., Zhilyaev, Yu. V., Fedirko, V. A., Zahn, D. R. T.

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Binary acceptor doping of epitaxial gallium phosphide for high-temperature electronic devices von Zhilyaev, Yu. V., Panyutin, E. A., Fedorov, L. M.

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Raman scattering from LO–phonon–plasmon coupled modes in Ag-coated GaN nanocrystals von Bessolov, V.N., Konenkova, E.V., Zhilyaev, Yu.V., Paez Sierra, B.A., Zahn, D.R.T.

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Growth of single-crystalline GaN layers in a horizontal reactor by chloride epitaxy von Smirnov, S. A., Panteleev, V. N., Zhilyaev, Yu. V., Rodin, S. N., Segal, A. S., Makarov, Yu. N., Butashin, A. V.

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Generating broadband random Gaussian signals von Zhilyaev, Yu. V., Il’inskaya, N. D., Inovenkov, A. N., Karpov, A. A., Kuznetsov, S. I., Orlova, T. A., Panteleev, V. N., Panyutin, E. A., Snytkina, S. A., Titkova, O. V., Fedorov, L. M., Khvostikov, V. P.

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