Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform von Zheng, Zheyang, Chen, Tao, Zhang, Li, Song, Wenjie, Chen, Kevin J.

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Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy von Yang, Song, Huang, Sen, Wei, Jin, Zheng, Zheyang, Wang, Yuru, He, Jiabei, Chen, Kevin J.

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Perpetual step-like restructuring of hippocampal circuit dynamics von Zheng, Zheyang (Sam), Huszár, Roman, Hainmueller, Thomas, Bartos, Marlene, Williams, Alex H., Buzsáki, György

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Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs von Zhang, Li, Zheng, Zheyang, Yang, Song, Song, Wenjie, Feng, Sirui, Chen, Kevin J.

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Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs von He, Jiabei, Wei, Jin, Li, Yang, Zheng, Zheyang, Yang, Song, Huang, Baoling, Chen, Kevin J.

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Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements von Gong, Jiarui, Zheng, Zheyang, Vincent, Daniel, Zhou, Jie, Kim, Jisoo, Kim, Donghyeok, Ng, Tien Khee, Ooi, Boon S., Chen, Kevin J., Ma, Zhenqiang

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Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel von Cai, Xiangbin, Hua, Mengyuan, Zhang, Zhaofu, Yang, Song, Zheng, Zheyang, Cai, Yuan, Chen, Kevin J., Wang, Ning

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GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion von Song, Wenjie, Zhang, Jie, Zheng, Zheyang, Feng, Sirui, Yang, Xuelin, Shen, Bo, Chen, Kevin J.

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Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots von Wang, Peng, Lin, Shisheng, Ding, Guqiao, Li, Xiaoqiang, Wu, Zhiqian, Zhang, Shengjiao, Xu, Zhijuan, Xu, Sen, Lu, Yanghua, Xu, Wenli, Zheng, Zheyang

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A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field von Zhang, Meng, Li, Baikui, Zheng, Zheyang, Tang, Xi, Wei, Jin

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On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems von Zheng, Zheyang, Xu, Han, Zhang, Li, Chen, Kevin J.

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High } and } / } Ratio Enhancement-Mode Buried -Channel GaN MOSFETs on -GaN Gate Power HEMT Platform von Zheng, Zheyang, Song, Wenjie, Zhang, Li, Yang, Song, Wei, Jin, Chen, Kevin J.

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2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current von Qian, Qingkai, Lei, Jiacheng, Wei, Jin, Zhang, Zhaofu, Tang, Gaofei, Zhong, Kailun, Zheng, Zheyang, Chen, Kevin J.

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High I-ON and I-ON/I-OFF Ratio Enhancement-Mode Buried p-Channel GaN MOSFETs on p-GaN Gate Power HEMT Platform von Zheng, Zheyang, Song, Wenjie, Zhang, Li, Yang, Song, Wei, Jin, Chen, Kevin J.

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p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability von Zhang, Li, Zheng, Zheyang, Yang, Song, Song, Wenjie, He, Jiabei, Chen, Kevin J.

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RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates von Cheng, Yan, Ng, Yat Hon, Zheng, Zheyang, Chen, Kevin J.

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Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests von Sun, Jiahui, Wei, Jin, Zheng, Zheyang, Chen, Kevin J.

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RF Enhancement-Mode -GaN Gate HEMT on 200 mm-Si Substrates von Cheng, Yan, Yat Hon Ng, Zheng, Zheyang, Chen, Kevin J

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Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs von Xu, Han, Tang, Gaofei, Wei, Jin, Zheng, Zheyang, Chen, Kevin J.

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E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs von Wang, Chengcai, Hua, Mengyuan, Chen, Junting, Yang, Song, Zheng, Zheyang, Wei, Jin, Zhang, Li, Chen, Kevin J.

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