Technological features of irradiation of Si [p.sup.+]-n-[n.sup.+] diodes with electrons at elevated temperatures von Marchenko, I.G, Zhdanovich, N.E

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Effect of electron irradiation on characteristics of Mo Schottky barriers on epitaxial silicon von Korshunov, F.P., Marchenko, I.G., Zhdanovich, N.E., Gurin, P.M.

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High-temperature annealing of electron-irradiated high-voltage diode structures on neutron transmutation-doped Si von Korshunov, F.P., Zhdanovich, N.E., Karas, V.I., Marchenko, I.G.

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Study of the recombination properties of thermostable radiation defects in p–n structures manufactured in high resistivity neutron transmutation-doped silicon von Korshunov, F.P., Zhdanovich, N.E., Marchenko, I.G., Karas, V.I., Troschinskii, V.T.

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Роторный траншейный экскаватор von ZHIZHIN N.E, SOKOLOV G.I, ARENDT YU.A, ZHDANOVICH G.V, POKROVSKIJ V.V

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