Direct tunneling of electrons in Al-[n.sup.+]-Si-Si[O.sub.2]-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carrier... von Goldman, E.I, Gulyaev, Yu. V, Zhdan, A.G, Chucheva, G.V

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The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler–Nordheim... von Goldman, E.I., Kukharskaya, N.F., Zhdan, A.G.

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Investigations of transient space-charge-limited currents at saw-tooth voltage pulses von Zhdan, A.G., Musabekov, T.U., Sandomirsky, V.B., Elinson, M.I., Chugunova, M.E.

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Energy resolution increase of interface state spectroscopy with Tikhonov weak regularization method von Prikhod'ko, V.G., Zhdan, A.G.

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Energy resolution increase of interface state spectroscopy with tikhonov weak regularization method von Prikhod'ko, V.G., Zhdan, A.G.

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DEVICE FOR DETERMINING EXTENT OF COMPENSATION OF ADMIXTURES IN SEMICONDUCTORS von BUGAEV V.I, ZHDAN A.G, VEDENEEV A.S

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On the analysis of thermostimulated excitation curves von Sandomirskiĭ, V.B., Zhdan, A.G.

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Hall effect in island-like metal films with high resistance von Darevsky, A.S., Gulaev, I.B., Vedeneyev, A.S., Zhdan, A.G.

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Эмиттеры электронов, выполненные на основе монокристаллов полярных диэлектриков (окислов металлов MgO, Аl2О3, SiO2 и др.) с введенными в них донорными примесями, обладающих малым (... von ELINSON A.G, ZHDAN A.G

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METHOD OF DETERMINING IMPURITY CONCENTRATION IN SEMICONDUCTORS von RYLKOV V.V.,SU, VEDENEEV A.S.,SU, ZHDAN A.G.,SU

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METHOD OF DETERMINING EMISSION PARAMETERS OF THERMOCATHODES von MARKIN YU.V.,SU, BONDARENKO B.V.,SU, ZHDAN A.G.,SU

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METHOD OF DETERMINING IMPURITY PARAMETERS IN SEMICONDUCTORS von RYLKOV V.V.,SU, VEDENEEV A.S.,SU, ZHDAN A.G.,SU

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Автоэлектронный эмиттер von ZHDAN A.G, ELINSON M.I

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METHOD OF DETERMINING CHARGE OF FREE CARRIER IN INVERSE CHANNEL IGFET-TRANSISTORS von OMELCHENKO V.I.,SU, RYLKOV V.V.,SU, SHAFRAN A.G.,SU, ZHDAN A.G.,SU

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Frozen (metastable) conductivity in semiconductors von Sandomirskii, V.B., Zhdan, A.G., Messerer, M.A., Gulyaev, J.B., Pyasta, Ya.A., Darevskii, A.S.

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METHOD OF APPLYING METAL COATINGS von SVESHNIKOVA I.N.,SU, DIAMANT G.M.,SU, SIDORIN YU.YU.,SU, ZHDAN A.G.,SU

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M DETERMINING PARAMETERS OF BORDER STATES AT SEMICONDUCTOR-DIELECTRIC INTERFACE von VEDENEEV A.S.,SU, KUZNETSOV A.V.,SU, GOLDMAN E.I.,SU, ZHDAN A.G.,SU

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METHOD OF DETERMINING MOBILITY OF CHARGE CARRIERS IN SOLID BODIES von MUKHIN V.V.,SU, NIKITIN N.E.,SU, SINKEVICH V.F.,SU, ZHDAN A.G.,SU

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METHOD OF DETERMINING CHARACTERISTICS OF ELECTRONIC STATES AT SEMICONDUCTOR-DIELECTRIC INTERFACE von PONOMAREV A.N.,SU, SULZHENKO P.S.,SU, GULYAEV I.B.,SU, ZHDAN A.G.,SU

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METHOD OF DETERMINING MOBILITY OF CHARGE CARRIERS von OMELCHENKO V.I.,SU, RYLKOV V.V.,SU, SINKEVICH V.F.,SU, ZHDAN A.G.,SU

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