2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs von Horst, Fabian, Farokhnejad, Atieh, Zhao, Qing-Tai, Iniguez, Benjamin, Kloes, Alexander

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Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study von Saeidi, Ali, Jazaeri, Farzan, Bellando, Francesco, Stolichnov, Igor, Luong, Gia V., Qing-Tai Zhao, Mantl, Siegfried, Enz, Christian C., Ionescu, Adrian M.

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Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs von Liu, Mingshan, Lentz, Florian, Trellenkamp, Stefan, Hartmann, Jean-Michel, Knoch, Joachim, Grutzmacher, Detlev, Buca, Dan, Zhao, Qing-Tai

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Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors von Knoch, Joachim, Richstein, Benjamin, Han, Yi, Frentzen, Michael, Rainer Schreiber, Lars, Klos, Jan, Raffauf, Lena, Wilck, Noel, König, Dirk, Zhao, Qing-Tai

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Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm von Liu, Mingshan, Scholz, Stefan, Hardtdegen, Alexander, Bae, Jin Hee, Hartmann, Jean-Michel, Knoch, Joachim, Grutzmacher, Detlev, Buca, Dan, Zhao, Qing-Tai

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Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes von Xi, Fengben, Grenmyr, Andreas, Zhang, Jiayuan, Han, Yi, Bae, Jin Hee, Grützmacher, Detlev, Zhao, Qing‐Tai

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Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs von Schmidt, Matthias, Schafer, Anna, Minamisawa, Renato A., Buca, Dan, Trellenkamp, Stefan, Hartmann, Jean-Michel, Qing-Tai Zhao, Mantl, Siegfried

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Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts von Schulte-Braucks, Christian, Hofmann, Emily, Glass, Stefan, von den Driesch, Nils, Mussler, Gregor, Breuer, Uwe, Hartmann, Jean-Michel, Zaumseil, Peter, Schröder, Thomas, Zhao, Qing-Tai, Mantl, Siegfried, Buca, Dan

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Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs von Blaeser, Sebastian, Glass, Stefan, Schulte-Braucks, Christian, Narimani, Keyvan, von den Driesch, Nils, Wirths, Stephan, Tiedemann, Andreas T., Trellenkamp, Stefan, Buca, Dan, Mantl, Siegfried, Qing-Tai Zhao

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Characteristics of Recessed-Gate TFETs With Line Tunneling von Jyi-Tsong Lin, Tzu-Chi Wang, Wei-Han Lee, Chih-Ting Yeh, Glass, Stefan, Qing-Tai Zhao

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Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors von Han, Qinghua, Tromm, Thomas C. U., Hoffmann, Michael, Aleksa, Paulus, Schroeder, Uwe, Schubert, Juergen, Mantl, Siegfried, Zhao, Qing-Tai

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Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications von Xi, Fengben, Han, Yi, Grenmyr, Andreas, Grutzmacher, Detlev, Zhao, Qing-Tai

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Experimental I – V(T) and C – V Analysis of Si Planar p-TFETs on Ultrathin Body von Chang Liu, Qinghua Han, Glass, Stefan, Gia Vinh Luong, Narimani, Keyvan, Tiedemann, Andreas T., Fox, Alfred, Wenjie Yu, Xi Wang, Mantl, Siegfried, Qing-Tai Zhao

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Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells von Strangio, Sebastiano, Palestri, Pierpaolo, Esseni, David, Selmi, Luca, Crupi, Felice, Richter, Simon, Qing-Tai Zhao, Mantl, Siegfried

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Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions von Biswas, Arnab, Gia Vinh Luong, Chowdhury, M. Foysol, Alper, Cem, Qing-Tai Zhao, Udrea, Florin, Mantl, Siegfried, Ionescu, Adrian M.

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Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications von Qing-Tai Zhao, Richter, Simon, Schulte-Braucks, Christian, Knoll, Lars, Blaeser, Sebastian, Gia Vinh Luong, Trellenkamp, Stefan, Schafer, Anna, Tiedemann, Andreas, Hartmann, Jean-Michel, Bourdelle, Konstantin, Mantl, Siegfried

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Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions von Narimani, Keyvan, Trellenkamp, Stefan, Tiedemann, Andreas, Mantl, Siegfried, Zhao, Qing-Tai

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A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes von Liu, Chenhe, Ren, Qinghua, Chen, Zhixi, Zhao, Lantian, Liu, Chang, Liu, Qiang, Yu, Wenjie, Liu, Xinke, Zhao, Qing-Tai

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Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications von Xi, Fengben, Han, Yi, Liu, Mingshan, Bae, Jin Hee, Tiedemann, Andreas, Grützmacher, Detlev, Zhao, Qing-Tai

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Experimental Investigation of – Characteristics of Si Tunnel FETs von Chang Liu, Glass, Stefan, Gia Vinh Luong, Narimani, Keyvan, Qinghua Han, Tiedemann, Andreas T., Fox, Alfred, Wenjie Yu, Xi Wang, Mantl, Siegfried, Qing-Tai Zhao

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