Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation von Mueller, M., Zhao, Q.T., Urban, C., Sandow, C., Buca, D., Lenk, S., Estévez, S., Mantl, S.

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NiSi2/Si interface chemistry and epitaxial growth mode von MI, S. B, JIA, C. L, ZHAO, Q. T, MANTL, S, URBAN, K

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Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs von Zhang, M., Knoch, J., Zhao, Q.T., Breuer, U., Mantl, S.

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Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents von Narimani, K., Glass, S., Bernardy, P., von den Driesch, N., Zhao, Q.T., Mantl, S.

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Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages von Luong, G.V., Strangio, S., Tiedemannn, A., Lenk, S., Trellenkamp, S., Bourdelle, K.K., Zhao, Q.T., Mantl, S.

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Process modules for GeSn nanoelectronics with high Sn-contents von Schulte-Braucks, C., Glass, S., Hofmann, E., Stange, D., von den Driesch, N., Hartmann, J.M., Ikonic, Z., Zhao, Q.T., Buca, D., Mantl, S.

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Roughness improvement of the CoSi2/Si-interface for an application as buried silicide von ZIMMERMANN, S, ZHAO, Q. T, HÖHNEMANN, H, WIEMER, M, KAUFMANN, C, MANTL, S, DUDEK, V, GESSNER, T

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Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon von Knoll, L., Zhao, Q.T., Habicht, S., Urban, C., Ghyselen, B., Mantl, S.

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Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks von Schulte-Braucks, C, Narimani, K, Glass, S, von den Driesch, N, Hartmann, J.M, Ikonic, Z, Afanas'ev, Valeri, Zhao, Q.T, Mantl, S, Buca, D

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Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity von Richter, S., Trellenkamp, S., Schäfer, A., Hartmann, J.M., Bourdelle, K.K., Zhao, Q.T., Mantl, S.

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Generation of uniform transverse beam distributions for high-energy electron radiography von Zhao, Q.T., Cao, S.C., Cheng, R., Du, Y.C., Shen, X.K., Wang, Y.R., Xiao, J.H., Zong, Y., Zhu, Y.L., Zhou, Y.W., Zhao, Y.T., Zhang, Z.M., Gai, W.

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Design and simulation study of ultra-fast beam bunches split for three orthogonal planes high-energy electron dynamic radiography von Zhao, Q.T., Cao, S.C., Shen, X.K., Wang, Y.R., Zong, Y., Xiao, J.H., Zhu, Y.L., Zhou, Y.W., Liu, M., Cheng, R., Zhao, Y.T., Zhang, Z.M., Gai, W.

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Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3 von Luong, G.V., Knoll, L., Blaeser, S., Süess, M.J., Sigg, H., Schäfer, A., Trellenkamp, S., Bourdelle, K.K., Buca, D., Zhao, Q.T., Mantl, S.

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Silicon–germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions von Richter, S., Blaeser, S., Knoll, L., Trellenkamp, S., Fox, A., Schäfer, A., Hartmann, J.M., Zhao, Q.T., Mantl, S.

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Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs von Yu, W., Zhang, B., Liu, C., Zhao, Y., Wu, W.R., Xue, Z.Y., Chen, M., Buca, D., Hartmann, J.-M., Wang, X., Zhao, Q.T., Mantl, S.

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20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain von KNOLL, L, ZHAO, Q. T, LUPTAK, R, TRELLENKAMP, S, BOURDELLE, K. K, MANTL, S

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Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50nm von Knoll, L., Richter, S., Nichau, A., Trellenkamp, S., Schäfer, A., Bourdelle, K.K., Hartmann, J.M., Zhao, Q.T., Mantl, S.

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Si tunneling transistors with high on-currents and slopes of 50mV/dec using segregation doped NiSi2 tunnel junctions von Knoll, L., Schmidt, M., Zhao, Q.T., Trellenkamp, S., Schäfer, A., Bourdelle, K.K., Mantl, S.

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Nanometer patterning of epitaxial CoSi2 on silicon-on-insulator substrates von ZHAO, Q. T, KLUTH, P, WINNERL, S, LENK, S, MANTL, S

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Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source von Zhao, Q.T., Yu, W.J., Zhang, B., Schmidt, M., Richter, S., Buca, D., Hartmann, J.-M., Luptak, R., Fox, A., Bourdelle, K.K., Mantl, S.

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