Mechanism of reverse gate leakage current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation von Sun, Chang-Hao, Peng, Chao, Zhang, Zhan-Gang, Wang, Jin-Bin, Yue, Shao-Zhong, Zhang, Hong, Chen, Zi-Wen, Ou-Yang, Xiao-Ping, Lei, Zhi-Feng, Zhong, Xiang-Li

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Study on Single Event Transient Pulse Characteristics of 16nm SOI FinFET Devices von Yang, Shao-Hua, Lin, Qian, Zhang, Zhan-Gang, Peng, Chao, Wu, Fu-Gen

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Proton induced radiation effect of SiC MOSFET under different bias von Zhang, Hong, Guo, Hong-Xia, Lei, Zhi-Feng, Peng, Chao, Ma, Wu-Ying, Wang, Di, Sun, Chang-Hao, Zhang, Feng-Qi, Zhang, Zhan-Gang, Yang, Ye, Lv, Wei, Wang, Zhong-Ming, Zhong, Xiang-Li, Ouyang, Xiao-Ping

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Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs von Yang, Shao-Hua, Zhang, Zhan-Gang, Lei, Zhi-Feng, Huang, Yun, Xi, Kai, Wang, Song-Lin, Liang, Tian-Jiao, Tong, Teng, Li, Xiao-Hui, Peng, Chao, Wu, Fu-Gen, Li, Bin

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Investigation of maximum proton energy for qualified ground-based evaluation of single-event effects in SRAM devices von Zhang, Zhan-Gang, Huang, Yun, En, Yun-Fei, Lei, Zhi-Feng

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Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs von Cai, Chang, Liu, Tian-Qi, Li, Xiao-Yuan, Liu, Jie, Zhang, Zhan-Gang, Geng, Chao, Zhao, Pei-Xiong, Li, Dong-Qing, Ye, Bing, Ji, Qing-Gang, Mo, Li-Hua

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Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs von 雷志锋 郭红霞 曾畅 陈辉 王远声 张战刚

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Alkyl Side Chains Connected to Aromatic Units in Dagang Vacuum Residue and Its Supercritical Fluid Extraction and Fractions (SFEFs) von Zhang, Zhan Gang, Guo, Shaohui, Zhao, Suoqi, Yan, Guangxu, Song, Lanqi, Chen, Libo

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Mechanisms and shielding characteristics of alpha particle-induced soft errors in 28 and 40 nm configuration memories of SRAM-based FPGAs von Luo, Jun-Yang, Zhang, Hong, Zhang, Zhan-Gang, Lei, Zhi-Feng, Guo, Jin-Long, Du, Guang-Hua, Peng, Chao, He, YuJuan, Zhong, Xiang-Li

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Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers von 张战刚 刘杰 候明东 孙友梅 赵发展 刘刚 韩郑生 耿超 刘建德 习凯 段敬来 姚会军 莫丹 罗捷 古松 刘天奇

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Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility von 耿超 刘杰 习凯 张战刚 古松 刘天奇

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Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool von Lei, Zhi-Feng, Zhang, Zhan-Gang, En, Yun-Fei, Huang, Yun

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Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence von 耿超 刘杰 习凯 张战刚 古松 侯明东 孙友梅 段敬来 姚会军 莫丹

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Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation von 张战刚 刘杰 侯明东 孙友梅 苏弘 段敬来 莫丹 姚会军 罗捷 古松 耿超 习凯

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Modeling the applicability of linear energy transfer on single event upset occurrence von 耿超 刘杰 张战刚 习凯 古松 侯明东 孙友梅 段敬来 姚会军 莫丹 罗捷

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Implementation and verification of different ECC mitigation designs for BRAMs in flash-based FPGAs von 杨振雷 王晓辉 张战刚 刘杰 苏弘

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Monte Carlo predictions of proton SEE cross-sections from heavy ion test data von 习凯 耿超 张战刚 侯明东 孙友梅 罗捷 刘天奇 王斌 叶兵 殷亚楠 刘杰

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Radiation tolerance studies on the VA32 ASIC for DAMPE BGO calorimeter von 高山山 封常青 蒋荻 刘树彬 张战刚 习凯 安琪

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A flexible and robust soft-error testing system for microelectronic devices and integrated circuits von 王晓辉 童腾 苏弘 刘杰 张战刚 古松 刘天奇 孔洁 赵兴文 杨振雷

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Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout von 张战刚 刘杰 侯明东 孙友梅 苏弘 古松 耿超 姚会军 罗捷 段敬来 莫丹 习凯 恩云飞

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