A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate von Liu, Bo (波刘), Feng, Zhihong (志红冯), Zhang, Sen (森张), Dun, Shaobo (少博敦), Yin, Jiayun (甲运尹), Li, Jia (佳李), Wang, Jingjing (晶晶王), Zhang, Xiaowei (效帏张), Fang, Yulong (玉龙房), Cai, Shujun (树军蔡)

Volltext