An efficient dose-compensation method for proximity effect correction von 王颖 韩伟华 杨香 张仁平 张杨 杨富华

Volltext

Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure von 张杨 张仁平 韩伟华 刘剑 杨香 王颖 李千秋 杨富华

Volltext

Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process von 颜伟 张仁平 杜彦东 韩伟华 杨富华

Volltext

Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation von Zhang, Renping (仁平 张), Yan, Wei (伟颜), Wang, Xiaoliang (晓亮 王), Yang, Fuhua (富华 杨)

Volltext