Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs von Zhang, Qingchun (Jon), Agarwal, Anant K.

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4H-SiC Trench Schottky Diodes for Next Generation Products von Allen, Scott, Zhang, Qing Chun Jon, Duc, Jennifer, Palmour, John W., Hull, Brett, Mieczkowski, Van

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Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors von Muzykov, Peter G., Kennedy, Robert M., Zhang, Qingchun (Jon), Capell, Craig, Burk, Al, Agarwal, Anant, Sudarshan, Tangali S.

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Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers von Zhang, Q. Jon, Rivera, Angel, Sumakeris, Joseph J., Hefner, A., Paisley, Michael J., Tsvetkov, Valeri F., O'Loughlin, Michael J., Richmond, Jim, Powell, Adrian R., Hull, Brett A.

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Wider SOA SGT MOSFET With Self-Adjusting Negative Feedback by Patterning the Varied Resistance of Source von Ye, Jun, Mo, Weiye, Xiao, Xuan, Liu, Haonan, Song, Yang, Huang, Wei, Zhang, Debin, Li, Liang, Ma, Hongping, Zhang, Qingchun Jon, Zhang, D. W.

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SiC Power Devices for Microgrids von Zhang, Qingchun, Callanan, Robert, Das, M. K., Ryu, Sei-Hyung, Agarwal, Anant K., Palmour, John W.

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Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress von Zhang, Yuan-Lan, Zhang, Jie, Ma, Hong-Ping, Chi, Yan-Qing, Tian, Hao-Ran, Liu, Jian-Hua, Liu, Qi-Bin, Chen, Zhong-Guo, Zhang, Qingchun Jon

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Impact of an annealing atmosphere on band-alignment of a plasma-enhanced atomic layer deposition-grown Ga2O3/SiC heterojunction von Shen, Yi, Wang, An-Feng, Ma, Hong-Ping, Qi, Xin, Yuan, Qilong, Yang, Mingyang, Qiu, Mengting, Zhang, Bingxue, Jiang, Nan, Zhang, Qingchun Jon

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4H–SiC BJTs with current gain of 110 von Zhang, Qingchun (Jon), Agarwal, Anant, Burk, Al, Geil, Bruce, Scozzie, Charles

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Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes von Zhang, Qing Chun Jon, Agarwal, Anant K., Mahadik, Nadeemullah A., Stahlbush, Robert E.

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12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance von Jonas, Charlotte, Palmour, John W., Zhang, Q. Jon, Sumakeris, Joseph J., Agarwal, Anant K.

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10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC von Burk, Albert A., Scozzie, Charles, Zhang, Qing Chun Jon, Agarwal, Anant K., Palmour, John W., O'Loughlin, Michael J., Callanan, Robert

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Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes von Burk, Albert A., Scozzie, Charles, Zhang, Qing Chun Jon, Agarwal, Anant K., Stahlbush, Robert E., Palmour, John W., O'Loughlin, Michael J.

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4H-SiC Bipolar Junction Transistors with a Current Gain of 108 von Jonas, Charlotte, Burk, Albert A., Geil, Bruce, Scozzie, Charles, Zhang, Q. Jon, Capell, Craig, Young, Jonathan, Agarwal, Anant K., Palmour, John W., Callanan, Robert

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4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield von Qingchun Zhang, Burk, A., Husna, F., Callanan, R., Agarwal, A., Palmour, J., Stahlbush, R., Scozzie, C.

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SCHOTTKY DIODE MANUFACTURING METHOD von ZHANG, Qingchun Jon, ZHANG, Yuanlan

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SCHOTTKY DIODE AND MANUFACTURING METHOD THEREFOR von ZHANG, Qingchun Jon, ZHANG, Yuanlan

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SCHOTTKY DIODE STRUCTURE AND METHOD FOR MANUFACTURING SAME von HOU, Xinlan, ZHANG, Qingchun Jon

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New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C von Oingchun Zhang, Jonas, C., Callanan, R., Sumakeris, J., Das, M., Agarwal, A., Palmour, J., Sei-Hyung Ryu, Jun Wang, Alex Huang

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A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching von Jonas, Charlotte, Zhang, Q. Jon, Clayton, Jack, Capell, Craig, Donofrio, Matthew, Sumakeris, Joseph J., Haney, Sarah K., Husna, Fatima, Richmond, Jim, Callanan, Robert, Das, Mrinal K.

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