A novel method to enhance the gettering efficiency in p-type Czochralski silicon by a sacrificial porous silicon layer von Zhang, Caizhen (彩珍 张), Wang, Yongshun (永顺 王), Wang, Zaixing (再兴 汪)

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Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure von Wang, Yongshun (永顺 王), Feng, Jingjing (晶晶 冯), Liu, Chunjuan (春娟 刘), Wang, Zaixing (再兴 汪), Zhang, Caizhen (彩珍 张), Chang, Peng (鹏常)

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Ohmic contact behaviour of Co/C/4H-SiC structures von Wang, Yongshun (永顺 王), Liu, Chunjuan (春娟 刘), Gu, Shengjie (生杰 顾), Zhang, Caizhen (彩珍 张)

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