The effects of beam oscillation on the quality of laser deposited metal parts von Vildanov, A M, Babkin, K D, Zemlyakov, E V, Gushchina, M O

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Residual stress measurements of laser metal deposited Ti-6Al-4V parts using neutron diffraction von Em, V T, Ivanov, S Y, Karpov, I D, Rylov, S A, Zemlyakov, E V, Babkin, K D

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A Study of Residual Stresses in Steel Plates Obtained by Laser Deposition Directly on a Rigid Substrate von Karpov, I. D., Em, V. T., Rylov, S. A., Ivanov, S. Yu, Zemlyakov, E. V., Babkin, K. D.

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Simulation modelling in design of a city transit vehicle with electromagnetic suspension von Yaroslavtsev, M V, Latyshev, R N, Zemlyakov, E A

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Laser welding microassembly housing from titanium alloys in inert atmosphere with excess pressure von Kuznetsov, M., Zemlyakov, E., Toporkova, E., Kurakin, A., Arkhipov, A.

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Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs von Tarasova, E. A., Khazanova, S. V., Golikov, O. L., Puzanov, A. S., Obolensky, S. V., Zemlyakov, V. E.

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Normally-Off p-Gate Transistor Based on AlGaN/GaN Heterostructures von Egorkin, V. I., Bespalov, V. A., Zaitsev, A. A., Zemlyakov, V. E., Kapaev, V. V., Kukhtyaeva, O. B.

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Influence of Laser Radiation Transversal Oscillation on a Quality Formation at the Direct Laser Deposition von Kurakin, A., Murzin, V., Karpov, V., Kuznetsov, M., Zemlyakov, E., Turichin, G.

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High-Speed Direct Laser Deposition: Technology, Equipment and Materials von Turichin, G A, V V Somonov, Babkin, K D, Zemlyakov, E V, Klimova, O G

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Neutron Diffraction Research of Residual Stress in Metal Plates Deposited on Rigid Substrate by DLMD Method von Karpov, I. D., Rylov, S. A., Em, V. T., Blagov, A. E., Ivanov, S. Y., Zemlyakov, E. V., Babkin, K. D.

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Evaluating the Switching Efficiency of Avalanche S-Diodes in a High-Current Mode von Prudaev, Ilya A., Kopyev, Viktor V., Oleinik, Vladimir L., Zemlyakov, Valery E.

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Development of Direct Laser Deposition Technology for Large-Scale Products of Nuclear Power Engineering von Korolev, V. A., Sidorov, A. V., Mikhailov, I. Yu, Matsaev, A. A., Zemlyakov, E. V., Kuznetsov, P. A., Nameev, D. A.

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Investigation of the Effect of Atomic Composition on the Plasma-Chemical Etching Rate of Silicon Nitride in High-Power Transistors Based on an AlGaN/GaN Heterojunction von Garmash, V. I., Zemlyakov, V. E., Egorkin, V. I., Kovalchuk, A. V., Shapoval, S. Y.

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Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures von Egorkin, V. I., Zemlyakov, V. E., Nezhentsev, A. V., Garmash, V. I.

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Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors integrated on a single chip von Popov, V. V., Yermolaev, D. M., Maremyanin, K. V., Zemlyakov, V. E., Maleev, N. A., Gavrilenko, V. I., Bespalov, V. A., Yegorkin, V. I., Ustinov, V. M., Shapoval, S. Yu

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Collapsing-field-domain-based 200 GHz solid-state source von Vainshtein, Sergey N., Duan, Guoyong, Yuferev, Valentin S., Zemlyakov, Valery E., Egorkin, Vladimir I., Kalyuzhnyy, Nikolay A., Maleev, Nikolai A., Egorov, Anton Yu, Kostamovaara, Juha T.

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High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array von Popov, V. V., Ermolaev, D. M., Maremyanin, K. V., Maleev, N. A., Zemlyakov, V. E., Gavrilenko, V. I., Shapoval, S. Yu

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GaN power IC normally-on and normally-off transistors technology and simulation von Egorkin, V I, Bespalov, V A, Kukhtyaeva, O B, Zemlyakov, V E, Kapaev, V V, Zaitsev, A A

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Synthesis of N-Acetylmuramyl-L-Alanyld- Isoglutamine α-Phenylglycoside von Zemlyakov, A. E., Tsikalova, V. N., Tsikalov, V. V.

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Synthesis of α-Cyclooctyl- and α-Cyclopentadecylglycosides of N-Acetylmuramyl-L-Alanyl-D-Isoglutamine von Zemlyakov, A. E., Tsikalov, V. V., Tsikalova, V. N.

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