A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET von Zelsacher, R., Wood, A.C.G., Bacher, E., Prax, E., Sorschag, K., Krumrey, J., Baumgartl, J.

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Thermal and free carrier concentration mapping during ESD event in smart Power ESD protection devices using an improved laser interferometric technique von Fürböck, C., Esmark, K., Litzenberger, M., Pogany, D., Groos, G., Zelsacher, R., Stecher, M., Gornik, E.

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Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures von Esmark, K., Furbock, C., Gossner, H., Groos, G., Litzenberger, M., Pogany, D., Zelsacher, R., Stecher, M., Gornik, E.

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