Effect of the Dopant Concentration on the Luminescence Properties of InGaAs/GaAs Spin Light-Emitting Diodes with a Mn [delta] Layer von Rykov, A.V, Dorokhin, M.V, Malysheva, E.I, Demina, P.B, Vikhrova, O.V, Zdoroveishev, A.V

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Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy von Levichev, S., Volkova, N.S., Gorshkov, A.P., Zdoroveishev, A.V., Vikhrova, O.V., Utsyna, E.V., Istomin, L.A., Zvonkov, B.N.

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Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer von Rykov, A. V., Dorokhin, M. V., Malysheva, E. I., Demina, P. B., Vikhrova, O. V., Zdoroveishev, A. V.

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GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer von Dorokhin, M. V., Malysheva, E. I., Zdoroveishev, A. V., Danilov, Yu. A., Kudrin, A. V.

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