Ge/Si(001) Heteroepitaxial Layers Doped in the HW CVD Process by Impurity Evaporation from a Sublimating Ge Source von Titova, A. M., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Zaitsev, A. V., Alyabina, N. A., Kudrin, A. V., Zdoroveishev, A. V.

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Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers von Prokhorov, D. S., Shengurov, V. G., Denisov, S. A., Filatov, D. O., Zdoroveishev, A. V., Chalkov, V. Yu, Zaitsev, A. V., Ved’, M. V., Dorokhin, M. V., Baidakova, N. A.

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Morphology and photoelectronic properties of InAs/GaAs surface quantum dots grown by metal-organic vapour-phase epitaxy von Karpovich, I A, Baidus, N V, Zvonkov, B N, Morozov, S V, Filatov, D O, Zdoroveishev, A V

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Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy von Levichev, S., Volkova, N.S., Gorshkov, A.P., Zdoroveishev, A.V., Vikhrova, O.V., Utsyna, E.V., Istomin, L.A., Zvonkov, B.N.

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Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer von Rykov, A. V., Dorokhin, M. V., Malysheva, E. I., Demina, P. B., Vikhrova, O. V., Zdoroveishev, A. V.

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GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer von Dorokhin, M. V., Malysheva, E. I., Zdoroveishev, A. V., Danilov, Yu. A., Kudrin, A. V.

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Diagnostics of height distribution of InAs/GaAs quantum dot arrays by means of carbon tetrachloride treatment in vapor phase epitaxy conditions von Zdoroveishev, A. V., Demina, P. B., Karpovich, I. A.

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Photoelectric properties of bimodal arrays of InAs/GaAs quantum dots grown by means of gas phase epitaxy von Gorshkov, A. P., Volkova, N. S., Karpovich, I. A., Zdoroveishev, A. V., Polova, I. A.

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Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy von LEVICHEV, S, VOLKOVA, N. S, GORSHKOV, A. P, ZDOROVEISHEV, A. V, VIKHROVA, O. V, UTSYNA, E. V, ISTOMIN, L. A, ZVONKOV, B. N

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Properties of MnSb/GaAs heterostructures von Vikhrova, O. V., Danilov, Yu. A., Dorokhin, M. V., Drozdov, Yu. N., Zvonkov, B. N., Zdoroveishev, A. V., Kudrin, A. V., Kalentyeva, I. L.

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Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy von Dorokhin, M. V., Zdoroveishev, A. V., Malysheva, E. I., Danilov, Yu. A., Zvonkov, B. N., Sholina, A. E.

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Investigation of the energy spectra and the electron–hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer von Gorshkov, Alexey P., Volkova, Natalia S., Istomin, Leonid A., Zdoroveishev, Anton V., Levichev, Sergey

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