Growth of III-N/graphene heterostructures in single vapor phase epitaxial process von Lundin, W.V., Zavarin, E.E., Sakharov, A.V., Zakheim, D.A., Davydov, V.Yu, Smirnov, A.N., Eliseyev, I.A., Yagovkina, M.A., Brunkov, P.N., Lundina, E.Yu, Markov, L.K., Tsatsulnikov, A.F.

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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation von Tikhomirov, V. G., Zemlyakov, V. E., Volkov, V. V., Parnes, Ya. M., Vyuginov, V. N., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Tsatsulnikov, A. F., Cherkashin, N. A., Mizerov, M. N., Ustinov, V. M.

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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs von Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Yagovkina, M. A., Ustinov, V. M., Cherkashin, N. A.

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Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency von Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Sinitsyn, M. A., Cherkashin, N. A., Karpov, S. Y.

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Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers von Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Usov, S. O., Zavarin, E. E., Brunkov, P. N., Yagovkina, M. A., Cherkashin, N. A., Tsatsulnikov, A. F.

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InGaN/GaN heterostructures grown by submonolayer deposition von Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Sakharov, A. V., Musikhin, Yu. G., Usov, S. O., Mizerov, M. N., Cherkashin, N. A.

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Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region von Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Nikolaev, A. E., Sakharov, A. V., Rozhavskaya, M. M., Usov, S. O., Brunkov, P. N., Synitsin, M. A., Davydov, D. V., Mizerov, M. N., Cherkashin, N. A.

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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes von Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Cherkashin, N. A., Ber, B. Ya, Kazantsev, D. Yu, Mizerov, M. N., Park, Hee Seok, Hytch, M., Hue, F.

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Study of silicon nitride deposition in III-N MOVPE reactors von Lundin, W.V., Rodin, S.N., Zavarin, E.E., Sakharov, A.V., Zakheim, D.A., Nikolaev, A.E., Tsatsulnikov, A.F.

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The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes von Sizov, V. S., Tsatsulnikov, A. F., Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Cherkashin, N. A., Hÿtch, M. J., Nikolaev, A. E., Mintairov, A. M., He, Yan, Merz, J. L.

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Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes von Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Sakharov, A. V., Usov, S. O., Nikolaev, A. E., Davydov, D. V., Cherkashin, N. A., Tsatsulnikov, A. F.

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Formation of composite InGaN/GaN/InAlN quantum dots von Tsatsul’nikov, A. F., Zavarin, E. E., Kryzhanovskaya, N. V., Lundin, W. V., Saharov, A. V., Usov, S. O., Brunkov, P. N., Goncharov, V. V., Cherkashin, N. A., Hytch, M.

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Study of GaN doping with carbon from propane in a wide range of MOVPE conditions von Lundin, W.V., Sakharov, A.V., Zavarin, E.E., Kazantsev, D.Yu, Ber, B.Ya, Yagovkina, M.A., Brunkov, P.N., Tsatsulnikov, A.F.

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Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency von Karpov, S. Yu, Cherkashin, N. A., Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Sinitsin, M. A., Usov, S. O., Zavarin, E. E., Tsatsulnikov, A. F.

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Fast AlGaN growth in a whole composition range in planetary reactor von Lundin, W.V., Nikolaev, A.E., Rozhavskaya, M.M., Zavarin, E.E., Sakharov, A.V., Troshkov, S.I., Yagovkina, M.A., Tsatsulnikov, A.F.

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Hydrogen effects in III-nitride MOVPE von Yakovlev, E.V., Talalaev, R.A., Segal, A.S., Lobanova, A.V., Lundin, W.V., Zavarin, E.E., Sinitsyn, M.A., Tsatsulnikov, A.F., Nikolaev, A.E.

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Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells von Bolshakov, A. S., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, V. V., Tsatsulnikov, A. F.

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Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/AlxGa1-xN Superlattices von Davydov, V.Yu, Smirnov, A.N., Goncharuk, I.N., Kyutt, R.N., Scheglov, M.P., Baidakova, M.V., Lundin, W.V., Zavarin, E.E., Smirnov, M.B., Karpov, S.V., Harima, H.

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice von Lundin, W.V., Nikolaev, A.E., Sakharov, A.V., Zavarin, E.E., Valkovskiy, G.A., Yagovkina, M.A., Usov, S.O., Kryzhanovskaya, N.V., Sizov, V.S., Brunkov, P.N., Zakgeim, A.L., Cherniakov, A.E., Cherkashin, N.A., Hytch, M.J., Yakovlev, E.V., Bazarevskiy, D.S., Rozhavskaya, M.M., Tsatsulnikov, A.F.

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Elastic strains and delocalized optical phonons in AlN/GaN superlattices von Pankin, D. V., Smirnov, M. B., Davydov, V. Yu, Smirnov, A. N., Zavarin, E. E., Lundin, W. V.

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