Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology von Zauner, A.R.A., Aret, E., van Enckevort, W.J.P., Weyher, J.L., Porowski, S., Schermer, J.J.

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Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation von Zauner, A.R.A, Weyher, J.L, Plomp, M, Kirilyuk, V, Grzegory, I, van Enckevort, W.J.P, Schermer, J.J, Hageman, P.R, Larsen, P.K

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Recent advances in defect-selective etching of GaN von Weyher, J.L, Brown, P.D, Rouvière, J.L, Wosinski, T, Zauner, A.R.A, Grzegory, I

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Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD) von Weyher, J.L., Brown, P.D., Zauner, A.R.A., Müller, S., Boothroyd, C.B., Foord, D.T., Hageman, P.R., Humphreys, C.J., Larsen, P.K., Grzegory, I., Porowski, S.

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Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates von Kirilyuk, V., Zauner, A.R.A., Christianen, P.C.M., Weyher, J.L., Hageman, P.R., Larsen, P.K.

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Determination of polarity of GaN cross-section TEM specimens using quantitative electron diffraction von Zandbergen, H.W, Jansen, J, Zauner, A.R.A, Weyher, J.L

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An atomic force microscopy study of a temperature dependent morphology transition of GaN grown on sapphire by MOCVD von de Theije, F.K., Zauner, A.R.A., Hageman, P.R., van Enckevort, W.J.P., Larsen, P.K.

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A Study on the Silane Doping of Hetero-Epitaxial MOCVD Grown GaN von Hageman, P.R., Devillers, M.A.C., Zauner, A.R.A., Kirilyuk, V., Bouwens, W.S., Crane, R.C.M., Larsen, P.K.

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Homo-epitaxial growth on misoriented GaN substrates by MOCVD von Zauner, A.R.A., Schermer, J.J., van Enckevort, W.J.P., Kirilyuk, V., Weyher, J.L., Grzegory, I., Hageman, P.R., Larsen, P.K.

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