k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures von Lev, L. L., Maiboroda, I. O., Husanu, M.-A., Grichuk, E. S., Chumakov, N. K., Ezubchenko, I. S., Chernykh, I. A., Wang, X., Tobler, B., Schmitt, T., Zanaveskin, M. L., Valeyev, V. G., Strocov, V. N.

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Studying the Characteristics of Transistors Based on Gallium Nitride Heterostructures Grown by Ammonia Molecular Beam Epitaxy on Sapphire and Silicon Substrates von Andreev, A. A., Grishchenko, Yu. V., Ezubchenko, I. S., Chernykh, M. Ya, Kolobkova, E. M., Maiboroda, I. O., Chernykh, I. A., Zanaveskin, M. L.

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Parylene-based memristive synapses for hardware neural networks capable of dopamine-modulated STDP learning von Minnekhanov, A A, Shvetsov, B S, Emelyanov, A V, Chernoglazov, K Yu, Kukueva, E V, Nesmelov, A A, Grishchenko, Yu V, Zanaveskin, M L, Rylkov, V V, Demin, V A

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Technical Storage Ring Complex “Zelenograd” As a Base for an Engineering Center of Advanced Materials, Microelectronics, and Biomedical Technologies von Kovalchuk, M. V., Naraikin, O. S., Zanaveskin, M. L.

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Superconducting joint fabrication for HTS second generation GdBCO/YBCO tapes von Kulikov, I V, Chernykh, M Y, Krylova, T S, Yashkin, D S, Chernykh, I A, Zanaveskin, M L

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Influence of the growth conditions of LT-AlN on quality of HT-AlN growth on Si (1 1 1) by metalorganic chemical vapor deposition von Chernykh, M.Y., Ezubchenko, I.S., Mayboroda, I.O., Zanaveskin, M.L.

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Specifics of Heat Transfer in AlxGa1 – xN/GaN Heterostructures on Sapphire von Chernodubov, D. A., Maiboroda, I. O., Zanaveskin, M. L., Inyushkin, A. V.

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YBa2Cu3Ox-SrTiO3 multilayer approach on textured Ni-W tapes: Morphology, structure and critical current density improvement von Krylova, T.S., Chernykh, I.A., Chernykh, M.Y., Krasnoperov, E.P., Zanaveskin, M.L.

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Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow von Mayboroda, I. O., Kolobkova, E. M., Grishchenko, Yu. V., Chernykh, I. A., Zanaveskin, M. L., Chumakov, N. K.

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High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition von Ezubchenko, I. S., Chernykh, M. Ya, Mayboroda, I. O., Trun’kin, I. N., Chernykh, I. A., Zanaveskin, M. L.

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Transistors with High Electron Mobility Based on Gallium-Nitride Heterostructures for Millimeter Wavelengths von Ezubchenko, I. S., Kolobkova, E. M., Andreev, A. A., Chernykh, M. Ya, Grishchenko, Yu. V., Perminov, P. A., Chernykh, I. A., Zanaveskin, M. L.

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GaN-on-Silicon Growth Features: Controlled Plastic Deformation von Ezubchenko, I. S., Chernykh, M. Ya, Perminov, P. A., Grishchenko, J. V., Trun’kin, I. N., Chernykh, I. A., Zanaveskin, M. L.

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The Kondo effect in 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures von Chumakov, N K, Chernykh, I A, Davydov, A B, Ezubchenko, I S, Grishchenko, Yu V, Lev, L L, Maiboroda, I O, Strocov, V N, Valeyev, V G, Zanaveskin, M L

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A Superconducting Joint for 2G HTS Tapes von Kulikov, I. V., Chernykh, M. Y., Krylova, T. S., Ovcharov, A. V., Chernykh, I. A., Zanaveskin, M. L.

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Impact of band-bending on the k-resolved electronic structure of Si-doped GaN von Lev, L. L., Maiboroda, I. O., Grichuk, E. S., Chumakov, N. K., Schröter, N. B. M., Husanu, M.-A., Schmitt, T., Aeppli, G., Zanaveskin, M. L., Valeyev, V. G., Strocov, V. N.

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Substrates with Diamond Heat Sink for Epitaxial GaN Growth von Maiboroda, I. O., Chernykh, I. A., Sedov, V. S., Altakhov, A. S., Andreev, A. A., Grishchenko, Yu. V., Kolobkova, E. M., Mart’yanov, A. K., Konov, V. I., Zanaveskin, M. L.

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Influence of High-Temperature Annealing of the Textured Metal Ni–W Substrate on the Structural Properties of Seed Layer in HTS 2G tapes von Chernykh, M. Y., Krylova, T. S., Kulikov, I. V., Chernykh, I. A., Zanaveskin, M. L.

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Power Characteristics of GaN Microwave Transistors on Silicon Substrates von Chernykh, I. A., Romanovskiy, S. M., Andreev, A. A., Ezubchenko, I. S., Chernykh, M. Y., Grishchenko, J. V., Mayboroda, I. O., Korneev, S. V., Krymko, M. M., Zanaveskin, M. L., Sinkevich, V. F.

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Ohmic Contacts to Europium Oxide for Spintronic Devices von Andreev, A. A., Grishchenko, Yu. V., Chernykh, I. A., Zanaveskin, M. L., Lobanovich, E. F.

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Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal von Maiboroda, I. O., Grishchenko, J. V., Ezubchenko, I. S., Sokolov, I. S., Chernych, I. A., Andreev, A. A., Zanaveskin, M. L.

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