Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update von d’Alessandro, Vincenzo, Catalano, Antonio Pio, Scognamillo, Ciro, Müller, Markus, Schröter, Michael, Zampardi, Peter J., Codecasa, Lorenzo

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Industrial View of III-V Devices Compact Modeling for Circuit Design von Zampardi, Peter J., Kharabi, Faramarz

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Linearity Improvement of HBT-Based Doherty Power Amplifiers Based on a Simple Analytical Model von Yu Zhao, Metzger, A.G., Zampardi, P.J., Iwamoto, M., Asbeck, P.M.

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Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments von d'Alessandro, Vincenzo, Catalano, Antonio Pio, Codecasa, Lorenzo, Zampardi, Peter J., Moser, Brian

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A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches von d’Alessandro, Vincenzo, Catalano, Antonio Pio, Scognamillo, Ciro, Müller, Markus, Schröter, Michael, Zampardi, Peter J., Codecasa, Lorenzo

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Guest Editorial von Schreurs, Dominique, Zampardi, Peter J.

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Guest Editorial von Schreurs, Dominique, Zampardi, Peter J

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Guest Editorial von Schreurs, Dominique, Zampardi, Peter J

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Determination of safe reliability region over temperature and current density for through wafer vias von Whitman, Charles S., Meeder, Michael G., Zampardi, Peter J.

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A comparison of linear handset power amplifiers in different bipolar technologies von Nellis, K., Zampardi, P.J.

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Measuring seam/crack formation in interconnect metallization von Zampardi, Peter J., Cismaru, Cristian, Banbrook, Hal, Li, Bin

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Design of high-efficiency current-mode class-D amplifiers for wireless handsets von Tsai-Pi Hung, Metzger, A.G., Zampardi, P.J., Iwamoto, M., Asbeck, P.M.

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On the Compression and Blocking Distortion of Semiconductor-Based Varactors von Huang, C., Buisman, K., Zampardi, P. J., Larson, L. E., de Vreede, L. C. N.

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Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs von Constantin, N G, Zampardi, P J, El-Gamal, M N

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Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study von Catalano, Antonio Pio, Scognamillo, Ciro, Zampardi, Peter J., d'Alessandro, Vincenzo

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An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers von Metzger, A.G., Ramanathan, R., Jiang Li, Hsiang-Chih Sun, Cismaru, C., Hongxiao Shao, Rushing, L., Weller, K.P., Ce-Jun Wei, Yu Zhu, Klimashov, A., Tkachenko, Y.A., Bin Li, Zampardi, P.J.

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Characterization, design, modeling, and model validation of silicon-wafer M:N balun components under matched and unmatched conditions von Rotella, M., Cismaru, C., Tkachenko, Y., Yuhua Cheng, Zampardi, J.

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Analysis of Electrothermal Effects in Devices and Arrays in InGaP/GaAs HBT Technology von d’Alessandro, Vincenzo, Catalano, Antonio Pio, Scognamillo, Ciro, Codecasa, Lorenzo, Zampardi, Peter J.

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Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies von d'Alessandro, Vincenzo, Catalano, Antonio Pio, Magnani, Alessandro, Codecasa, Lorenzo, Rinaldi, Niccolò, Moser, Brian, Zampardi, Peter J.

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Efficiency improvement of a handset WCDMA PA module using Adaptive Digital Predistortion von Presti, Calogero D, Metzger, Andre G, Banbrook, Hal M, Zampardi, Peter J, Asbeck, Peter M

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