Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers von Metzger, A.G., d’Alessandro, V., Rinaldi, N., Zampardi, P.J.

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A comparison of linear handset power amplifiers in different bipolar technologies von Nellis, K., Zampardi, P.J.

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Current status and future trends of SiGe BiCMOS technology von Harame, D.L., Ahlgren, D.C., Coolbaugh, D.D., Dunn, J.S., Freeman, G.G., Gillis, J.D., Groves, R.A., Hendersen, G.N., Johnson, R.A., Joseph, A.J., Subbanna, S., Victor, A.M., Watson, K.M., Webster, C.S., Zampardi, P.J.

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Will CMOS amplifiers ever Kick-GaAs? von Zampardi, P J

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Design of high-efficiency current-mode class-D amplifiers for wireless handsets von Tsai-Pi Hung, Metzger, A.G., Zampardi, P.J., Iwamoto, M., Asbeck, P.M.

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Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors von Shimukovitch, A., Sakalas, P., Zampardi, P., Schroter, M., Matulionis, A.

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Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs von Constantin, N G, Zampardi, P J, El-Gamal, M N

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A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and... von Rotella, F., Bhattacharya, B.K., Blaschke, V., Matloubian, M., Brotman, A., Yuhua Cheng, Divecha, R., Howard, D., Lampaert, K., Miliozzi, P., Racanelli, M., Singh, P., Zampardi, P.J.

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Minority carrier properties of carbon-doped GaInAsN bipolar transistors von Welser, R E, Setzko, R S, Stevens, K S, Rehder, E M, Lutz, C R, Hill, D S, Zampardi, P J

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Linearity Improvement of HBT-Based Doherty Power Amplifiers Based on a Simple Analytical Model von Yu Zhao, Metzger, A.G., Zampardi, P.J., Iwamoto, M., Asbeck, P.M.

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Characterization of AlxGa1−xAs/GaAs heterojunction bipolar transistor structures using cross-sectional scanning force microscopy von Rosenthal, P. A., Yu, E. T., Pierson, R. L., Zampardi, P. J.

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Design concepts for semiconductor based ultra-linear varactor circuits (invited) von Huang, C, Buisman, K, Nanver, L K, Zampardi, P J, Larson, L E, de Vreede, L C N

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A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies von Zhang, S., Niu, G., Cressler, J.D., Mathew, S.J., Gogineni, U., Clark, S.D., Zampardi, P., Pierson, R.L.

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Delay of Kirk effect due to collector current spreading in heterojunction bipolar transistors von Zampardi, P.J., Dee-Son Pan

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On the Compression and Blocking Distortion of Semiconductor-Based Varactors von Huang, C., Buisman, K., Zampardi, P. J., Larson, L. E., de Vreede, L. C. N.

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Formulations and a Computer-Aided Test Method for the Estimation of IMD Levels in an Envelope Feedback RFIC Power Amplifier von Constantin, N. G., Kwok, K. H., Hongxiao Shao, Cismaru, C., Zampardi, P. J.

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16GHz low-power 1:4 prescalar fabricated in 1.0 mu m BiFET technology von Runge, K, Zampardi, P J, Pierson, R L, Penny, J

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Base Resistance Scaling for Transistors of Various Geometries von Yingying Yang, Zampardi, P. J.

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An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers von Metzger, A.G., Ramanathan, R., Jiang Li, Hsiang-Chih Sun, Cismaru, C., Hongxiao Shao, Rushing, L., Weller, K.P., Ce-Jun Wei, Yu Zhu, Klimashov, A., Tkachenko, Y.A., Bin Li, Zampardi, P.J.

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Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design von Zampardi, P.J., Chang, C.E., Fitzsimmons, S., Pierson, R.L., McDermott, B.T., Chen, P.F., Asbeck, P.

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