Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update von d’Alessandro, Vincenzo, Catalano, Antonio Pio, Scognamillo, Ciro, Müller, Markus, Schröter, Michael, Zampardi, Peter J., Codecasa, Lorenzo

Volltext

A comparison of linear handset power amplifiers in different bipolar technologies von Nellis, K., Zampardi, P.J.

Volltext

Industrial View of III-V Devices Compact Modeling for Circuit Design von Zampardi, Peter J., Kharabi, Faramarz

Volltext

Linearity Improvement of HBT-Based Doherty Power Amplifiers Based on a Simple Analytical Model von Yu Zhao, Metzger, A.G., Zampardi, P.J., Iwamoto, M., Asbeck, P.M.

Volltext

Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers von Metzger, A.G., d’Alessandro, V., Rinaldi, N., Zampardi, P.J.

Volltext

Design of high-efficiency current-mode class-D amplifiers for wireless handsets von Tsai-Pi Hung, Metzger, A.G., Zampardi, P.J., Iwamoto, M., Asbeck, P.M.

Volltext

Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs von Constantin, N G, Zampardi, P J, El-Gamal, M N

Volltext

Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments von d'Alessandro, Vincenzo, Catalano, Antonio Pio, Codecasa, Lorenzo, Zampardi, Peter J., Moser, Brian

Volltext

On the Compression and Blocking Distortion of Semiconductor-Based Varactors von Huang, C., Buisman, K., Zampardi, P. J., Larson, L. E., de Vreede, L. C. N.

Volltext

Characterization, design, modeling, and model validation of silicon-wafer M:N balun components under matched and unmatched conditions von Rotella, M., Cismaru, C., Tkachenko, Y., Yuhua Cheng, Zampardi, J.

Volltext

Guest Editorial von Schreurs, Dominique, Zampardi, Peter J.

Volltext

Guest Editorial von Schreurs, Dominique, Zampardi, Peter J

Volltext

Guest Editorial von Schreurs, Dominique, Zampardi, Peter J

Volltext

A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches von d’Alessandro, Vincenzo, Catalano, Antonio Pio, Scognamillo, Ciro, Müller, Markus, Schröter, Michael, Zampardi, Peter J., Codecasa, Lorenzo

Volltext

An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers von Metzger, A.G., Ramanathan, R., Jiang Li, Hsiang-Chih Sun, Cismaru, C., Hongxiao Shao, Rushing, L., Weller, K.P., Ce-Jun Wei, Yu Zhu, Klimashov, A., Tkachenko, Y.A., Bin Li, Zampardi, P.J.

Volltext

Determination of safe reliability region over temperature and current density for through wafer vias von Whitman, Charles S., Meeder, Michael G., Zampardi, Peter J.

Volltext

A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and... von Rotella, F., Bhattacharya, B.K., Blaschke, V., Matloubian, M., Brotman, A., Yuhua Cheng, Divecha, R., Howard, D., Lampaert, K., Miliozzi, P., Racanelli, M., Singh, P., Zampardi, P.J.

Volltext

Current status and future trends of SiGe BiCMOS technology von Harame, D.L., Ahlgren, D.C., Coolbaugh, D.D., Dunn, J.S., Freeman, G.G., Gillis, J.D., Groves, R.A., Hendersen, G.N., Johnson, R.A., Joseph, A.J., Subbanna, S., Victor, A.M., Watson, K.M., Webster, C.S., Zampardi, P.J.

Volltext

Measuring seam/crack formation in interconnect metallization von Zampardi, Peter J., Cismaru, Cristian, Banbrook, Hal, Li, Bin

Volltext

Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study von Catalano, Antonio Pio, Scognamillo, Ciro, Zampardi, Peter J., d'Alessandro, Vincenzo

Volltext