Design of wide-band CMOS VCO for multiband wireless LAN applications von Fong, N.H.W., Plouchart, J.-O., Zamdmer, N., Duixian Liu, Wagner, L.F., Plett, C., Tarr, N.G.

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Frequency-independent equivalent-circuit model for on-chip spiral inductors von Yu Cao, Groves, R.A., Xuejue Huang, Zamdmer, N.D., Plouchart, J.-O., Wachnik, R.A., Tsu-Jae King, Chenming Hu

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Modeling of Variation in Submicrometer CMOS ULSI Technologies von Springer, S.K., Lee, S., Lu, N., Nowak, E.J., Plouchart, J.-O., Watts, J.S., Williams, R.Q., Zamdmer, N.

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Increase in response time of low-temperature-grown GaAs photoconductive switches at high voltage bias von Zamdmer, N., Hu, Qing, McIntosh, K. A., Verghese, S.

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A 1-V 3.8 - 5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology von Fong, N.H.W., Plouchart, J.-O., Zamdmer, N., Duixian Liu, Wagner, L.F., Plett, C., Tarr, N.G.

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A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology von Neric Fong, Jonghae Kim, Plouchart, J.-O., Zamdmer, N., Duixian Liu, Wagner, L., Plett, C., Tarr, G.

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Mode-discriminating photoconductor and coplanar waveguide circuit for picosecond sampling von Zamdmer, N., Hu, Qing, Verghese, S., Förster, A.

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On-chip frequency-domain submillimeter-wave transceiver von Zamdmer, N., Hu, Qing, McIntosh, K. A., Verghese, S., Förster, A.

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Cryogenic picosecond sampling using fiber-coupled photoconductive switches von Verghese, S., Zamdmer, N., Hu, Qing, Förster, A.

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A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology von PLOUCHART, Jean-Olivier, KIM, Jonghae, WAGNER, Lawrence F, ZAMDMER, Noah, LU, Liang-Hung, SHERONY, Melanie, YUE TAN, GROVES, Robert A, TRZCINSKI, Robert, TALBI, Mohamed, RAY, Asit

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An optical correlator using a low-temperature-grown GaAs photoconductor von Verghese, S., Zamdmer, N., Hu, Qing, Brown, E. R., Förster, A.

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Suitability of Scaled SOI CMOS for High-Frequency Analog Circuits von Zamdmer, N., Plouchart, J.-O., Kim, J., Lu, L.-H., Narasimha, S., O'Neil, P., Ray, A., Sherony, M., Wagner, L.

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A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability von Plouchart, J.-O., Zamdmer, N., Jonghae Kim, Trzcinski, R., Narasimha, S., Khare, M., Wagner, L.F., Sweeney, S.L., Chaloux, S.

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A 243-GHz $F_t$ and 208-GHz $F_max$ , 90-nm SOI CMOS SoC Technology With Low-Power mmWave Digital and RF Circuit Capability von Plouchart, J.-O., Zamdmer, N., J. Kim, Trzcinski, R., Narasimha, S., Khare, M., Wagner, L.F., Sweeney, S.L., Chaloux, S.

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Record RF performance of 45-nm SOI CMOS Technology von Sungjae Lee, Jagannathan, B., Narasimha, S., Chou, A., Zamdmer, N., Johnson, J., Williams, R., Wagner, L., Jonghae Kim, Plouchart, J.-O., Pekarik, J., Springer, S., Freeman, G.

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RTA-Driven Intra-Die Variations in Stage Delay, and Parametric Sensitivities for 65nm Technology von Walsh, B., Utomo, H., Leobandung, E., Mahorowala, A., Mocuta, D., Miyamoto, K., Kumar, M., Huang, S., Gribelyuk, M., Gabor, A., Freeman, G., Dirahoui, B., Deshpande, S., Azuma, A., Chan, A., Maciejewski, E., Herman, J., Berg, G., Zimmerman, J., Kimura, H., Nowak, E.J., Logan, R., Glushchenkov, O., Zamdmer, N., Ahsan, I., Walsh, B., Utomo, H., Leobandung, E., Mahorowala, A., Mocuta, D., Miyamoto, K., Kumar, M., Huang, S., Gribelyuk, M., Gabor, A., Freeman, G., Dirahoui, B., Deshpande, S., Azuma, A., Chan, A., Maciejewski, E., Herman, J., Berg, G., Zimmerman, J., Kimura, H., Nowak, E.J., Logan, R., Glushchenkov, O., Zamdmer, N., Ahsan, I.

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Impact of intra-die thermal variation on accurate MOSFET gate-length measurement von Ahsan, I., Schroder, D.K., Nowak, E., Gluschenkov, O., Zamdmer, N., Logan, R.

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A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability von Plouchart, J.-O, Zamdmer, N, Jonghae Kim, Jonghae Kim, Trzcinski, R, Narasimha, S, Khare, M, Wagner, L.F, Sweeney, S.L, Chaloux, S

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A low-voltage 40-GHz complementary VCO with 15%25 frequency tuning range in SOI CMOS technology von Fong, Neric, Kim, Jonghae, Plouchart, J-O, Zamdmer, N, Liu, Duixian, Wagner, L, Plett, C, Tarr, G

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A 243-GHz F sub(t) and 208-GHz F sub(max), 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability von Plouchart, J-O, Zamdmer, N, Kim, Jonghae, Trzcinski, R, Narasimha, S, Khare, M, Wagner, L F, Sweeney, S L, Chaloux, S

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