Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications von Krajewski, T.A., Luka, G., Smertenko, P.S., Zakrzewski, A.J., Dybko, K., Jakiela, R., Wachnicki, L., Gieraltowska, S., Witkowski, B.S., Godlewski, M., Guziewicz, E.

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Intrinsic defects in GaN: what we are learning from magnetic resonance studies von Watkins, George D, Chow, K.H, Johannesen, P, Vlasenko, L.S, Bozdog, C, Zakrzewski, A.J, Mizuta, M, Sunakawa, H, Kuroda, N, Usui, Akira

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Optical properties of ZnSe, ZnCdSe and ZnSSe alloys doped with iron von Surkova, T.P, Kaczor, P, Zakrzewski, A.J, Swiatek, K, Ivanov, V.Yu, Godlewski, M, Polimeni, A, Eaves, L, Giriat, W

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Quantum Yield of the Auger-Type Nonradiative Transitions in Low-Dimensional Systems von Zakrzewski, A.J., Godlewski, M.

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Electrophysical diagnostics of Ag/HfO2/ZnO/TiAu structures von Krajewski, T.A., Smertenko, P.S., Luka, G., Wachnicki, L., Cherevko, A., Olkhovik, G., Zakrzewski, A.J., Godlewski, M., Guziewicz, E.

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Iron and Nickel as Centers of Nonradiative Recombination in ZnS and ZnSe von Godlewski, Marek, Zakrzewski, A.J., Surma, M.

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Indium DX-Like Centers in MBE CdTe Layers von Wasik, Dariusz, Zakrzewski, A.J., Kossut, Jacek, Karczewski, G., Przybytek, J., Baj, M., Wojtowicz, T.

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Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon von Frens, A.M., Schmidt, J., Janzén, Erik, Lindström, J. Lennart, Zakrzewski, A.J., Bennebroek, M.T., Chen, W.M., Monemar, Bo

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