Nitrogen-doped graphene by microwave plasma chemical vapor deposition von Kumar, A., Voevodin, A.A., Paul, R., Altfeder, I., Zemlyanov, D., Zakharov, D.N., Fisher, T.S.

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Perspectives of Single-Wall Carbon Nanotube Production in the Arc Discharge Process von Krestinin, A.V., Kiselev, N.A., Raevskii, A.V., Ryabenko, A.G., Zakharov, D.N., Zvereva, G.I.

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The structure of nanotubes fabricated by carbon evaporation at high gas pressure von Blank, V.D., Gorlova, I.G., Hutchison, J.L., Kiselev, N.A., Ormont, A.B., Polyakov, E.V., Sloan, J., Zakharov, D.N., Zybtsev, S.G.

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SEM and HREM study of the internal structure of nanotube rich carbon arc cathodic deposits von Kiselev, N.A., Moravsky, A.P., Ormont, A.B., Zakharov, D.N.

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Bifunctional nanoparticle–SILP catalysts (NPs@SILP) for the selective deoxygenation of biomass substrates von Luska, Kylie L., Julis, Jennifer, Stavitski, Eli, Zakharov, Dmitri N., Adams, Alina, Leitner, Walter

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Rapid synthesis of few-layer graphene over Cu foil von Kumar, A., Voevodin, A.A., Zemlyanov, D., Zakharov, D.N., Fisher, T.S.

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Acceleration of the Multilayer Network Operator Method Using MPI for Mobile Robot Team Control Synthesis von Diveev, A.I., Shmalko, E.Yu, Zakharov, D.N.

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Double-walled carbon nanotubes fabricated by a hydrogen arc discharge method von Hutchison, J.L., Kiselev, N.A., Krinichnaya, E.P., Krestinin, A.V., Loutfy, R.O., Morawsky, A.P., Muradyan, V.E., Obraztsova, E.D., Sloan, J., Terekhov, S.V., Zakharov, D.N.

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode [Formula Omitted] MOSFET von Wu, Y.Q, Wang, W.K, Koybasi, O, Zakharov, D.N, Stach, E.A, Nakahara, S, Hwang, J, Ye, P.D

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Examination of the local structure in composite and lowdimensional semiconductor by X-ray Absorption Spectroscopy von Lawniczak-Jablonska, K., Demchenko, I.N., Piskorska, E., Wolska,A., Talik, E., Zakharov, D.N., Liliental-Weber, Z.

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Carbon nanotubes from polyethylene precursors: Structure and structural changes caused by thermal and chemical treatment revealed by HREM von Kiselev, N.A., Sloan, J., Zakharov, D.N., Kukovitskii, E.F., Hutchison, J.L., Hammer, J., Kotosonov, A.S.

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Interfacial reactions during GaN and AlN epitaxy on 4H and 6H-SiC (0001) von Losurdo, M., Capezzuto, P., Bruno, G., Brown, A., Kim, T.H., Yi, Ch, Zakharov, D.N., Liliental-Weber, Z.

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Field electron emission from nanotube carbon layers grown by CVD process von Musatov, A.L., Kiselev, N.A., Zakharov, D.N., Kukovitskii, E.F., Zhbanov, A.I., Izrael’yants, K.R., Chirkova, E.G.

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Growth and Characterization of Pendeo-Epitaxial GaN_(11_20) on4H-SiC_(11_20) Substrates von Wagner, B.P., Reitmeier, Z.J., Park, J.S., Bachelor, D., Zakharov, D.N., Liliental-Weber, Z., Davis, R.F.

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET von Wu, Y.Q., Wang, W.K., Koybasi, O., Zakharov, D.N., Stach, E.A., Nakahara, S., Hwang, J., Ye, P.D.

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Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (1 1 2¯ 0) von Bishop, S.M., Park, J.-S., Gu, J., Wagner, B.P., Reitmeier, Z.J., Batchelor, D.A., Zakharov, D.N., Liliental-Weber, Z., Davis, R.F.

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Compositional modulation in von Liliental-Weber, Z., Zakharov, D.N., Yu, K.M., Ager III, J.W., Walukiewicz, W., Haller, E.E., Lu, H., Schaff, W.J.

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Examination of local structure of composite and low dimension semiconductor with X-ray absorption spectroscopy von Lawniczak-Jablonska, K., Demchenko, I.N., Piskorska, E., Wolska, A., Talik, E., Zakharov, D.N., Liliental-Weber, Z.

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Compositional modulation in In x Ga 1 - x N von Liliental-Weber, Z., Zakharov, D.N., Yu, K.M., Ager III, J.W., Walukiewicz, W., Haller, E.E., Lu, H., Schaff, W.J.

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Stable, free-standing Ge nanocrystals von Sharp, I.D., Xu, Q., Liao, C.Y., Yi, D.O., Beeman, J.W., Liliental-Weber, Z., Yu, K.M., Zakharov, D.N., Ager III, J.W., Chrzan,D.C., Haller, E.E.

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