Percolation conductivity in amorphous carbon films modified with palladium nanoparticles von Ryaguzov, A.P., Nemkayeva, R.R., Guseinov, N.R., Assembayeva, A.R., Zaitsev, S.I.

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A Confocal Collimator for Radionuclide Diagnostics and X-Ray Fluorescence Analysis von Zaitsev, S. I., Trofimov, O. V., Shabelnikova, Ya. L., Chukalina, M. V.

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Study of the electron lithography parameters by AFM von Myrzabekova, M.М., Guseinov, N.R., Zaitsev, S.I., Shabelnikova, Ya.L., Muratov, M.M., Muradova, S.R., Turarbaeva, T.B.

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Influence of the dose distribution on resist development properties von Knyazev, M.A., Svintsov, A.A., Zaitsev, S.I.

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A proposed laser source of ions for nanotechnology von Freinkman, B.G., Eletskii, A.V., Zaitsev, S.I.

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Fast electron resist contrast determination by “fitting before measurement” approach von Knyazev, M.A., Dubonos, S.V., Svintsov, A.A., Zaitsev, S.I.

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Robin Hood as self-organized criticality von Zaitsev, S.I.

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The first synthetic X-ray hologram: results von Firsov, A.A, Svintsov, A.A, Zaitsev, S.I, Erko, A, Aristov, V.V

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Simulation of recombination contrast of extended defects in the modulated EBIC von Sirotkin, V.V., Yakimov, E.B., Zaitsev, S.I.

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Simulation of heating in powerful electron lithography von Svintsov, A.A, Zaitsev, S.I.

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How to overcome the principal limitations of SEM columns for the use in e-beam lithography? von Dubonos, S.V., Gaifullin, B.N., Raith, H.R., Svintsov, A.A., Zaitsev, S.I.

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Characterization of the strength and position of semiconductor defects by the multielectrode EBIC (OBIC) method von Sirotkin, V.V., Zaitsev, S.I.

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Evaluation, verification and error determination of proximity parameters α, β and ν in electron beam lithography von Dubonos, S.V., Gaifullin, B.N., Raith, H.F., Svintsov, A.A., Zaitsev, S.I.

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Thin NIL films viscosity and rheological nano-probe von Svintsov, A.A., Trofimov, O.V., Zaitsev, S.I.

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Influence of development parameters on electron resist contrast von Knyazev, M.A., Svintsov, A.A., Zaitsev, S.I.

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Proximity correction for 3D structures von Dubonos, S.V., Gaifullin, B.N., Raith, H.F., Svintsov, A.A., Zaitsev, S.I.

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Proxy — A new approach for proximity correction in electron beam lithography von Aristov, V.V., Erko, A.I., Gaifullin, B.N., Svintsov, A.A., Zaitsev, S.I., Jede, R.R., Raith, H.F.

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Guaranteed accuracy of the method of ‘simple’ compensation in electron lithography von Aristov, V.V., Svintsov, A.A., Zaitsev, S.I.

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Some characteristics of stabilization of radiation in a moving isotropic plasma von Gavrilenko, V. G., Zaitsev, S. I.

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New writing routines for SEM based e-beam lithography von Dubonos, S.V., Raith, H.F., Svintsov, A.A., Zaitsev, S.I.

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