Experimental setup for the determination of spectral normal emissivity of conductive materials in the 1–18 μm wavelength range at 300–1700 °C in air von Mironov, R. A., Kryukov, A. E., Zabezhaylov, A. O., Zabezhaylov, M. O., Rusin, M. Y.

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Spectroscopic studies of molecular-beam epitaxially grown Cr2+-doped ZnSe thin films von Gallian, A., Fedorov, V. V., Kernal, J., Allman, J., Mirov, S. B., Dianov, E. M., Zabezhaylov, A. O., Kazakov, I. P.

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Formation of three-dimensional ZnSe-based semiconductor nanostructures von Alyshev, S. V., Zabezhaylov, A. O., Mironov, R. A., Kozlovsky, V. I., Dianov, E. M.

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Spectroscopic studies of molecular-beam epitaxially grown Cr 2 + -doped ZnSe thin films von Gallian, A., Fedorov, V. V., Kernal, J., Allman, J., Mirov, S. B., Dianov, E. M., Zabezhaylov, A. O., Kazakov, I. P.

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Dependence of the gap parameter on the number of CuO2 layers in a unit cell of optimally doped BSCCO, TBCCO, HBCCO and HSCCO von Ponomarev, Ya. G, Timergaleev, N. Z, Zabezhaylov, A. O, Uk, Kim Ki, Lorenz, M. A, Mueller, G, Piel, H, Schmidt, H, Janowitz, C, Krapf, A, Manzke, R

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Dependence of the gap parameter on the number of CuO2 layers in a unit cell of optimally doped BSCCO, TBCCO, HBCCO and HSCCO von Ponomarev, Ya G, Timergaleev, N Z, Zabezhaylov, A O, Kim Ki Uk, Lorenz, M A, Mueller, G, Piel, H, Schmidt, H, Janowitz, C, Krapf, A, Manzke, R

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