Design of projected phase-change memory mushroom cells for low-resistance drift von Philip, Timothy M., Brew, Kevin W., Li, Ning, Simon, Andrew, Liu, Zuoguang, Ok, Injo, Adusumilli, Praneet, Saraf, Iqbal, Conti, Richard, Ogundipe, Odunayo, Robison, Robert R., Saulnier, Nicole, Sebastian, Abu, Narayanan, Vijay

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Sub- 10^~\Omega -cm2 n-Type Contact Resistivity for FinFET Technology von Niimi, Hiroaki, Zuoguang Liu, Gluschenkov, Oleg, Mochizuki, Shogo, Fronheiser, Jody, Juntao Li, Demarest, James, Chen Zhang, Bei Liu, Jie Yang, Raymond, Mark, Haran, Bala, Huiming Bu, Yamashita, Tenko

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Impact of Phase‐Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large‐Scale Deep Learning Networks von Han, Jin-Ping, Rasch, Malte J., Liu, Zuoguang, Solomon, Paul, Brew, Kevin, Cheng, Kangguo, Ok, Injo, Chan, Victor, Longstreet, Michael, Kim, Wanki, Bruce, Robert L., Cheng, Cheng-Wei, Saulnier, Nicole, Narayanan, Vijay

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Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface von Shekhter, Pini, Kornblum, Lior, Liu, Zuoguang, Cui, Sharon, Ma, T. P., Eizenberg, Moshe

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Inelastic electron tunneling spectroscopy study of ultrathin Al2O3–TiO2 dielectric stack on Si von Liu, Zuoguang, Cui, Sharon, Kornblum, Lior, Eizenberg, Moshe, Chang, Ming-Feng, Ma, T. P.

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High-Quality Al2O3 for Low-Voltage High-Speed High-Temperature (Up to 250 °C) Nonvolatile Memory Technology von SHARON CUI, PENG, Cheng-Yi, WENQI ZHANG, XIAO SUN, JIE YANG, ZUOGUANG LIU, KORNBLUM, Lior, EIZENBERG, Moshe, MA, T. P

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FinFET External Resistance Analysis by Extended Shift-and-Ratio Method von Zhang, Chen, Liu, Zuoguang, Miao, Xin, Yamashita, Tenko

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High-Quality \hbox\hbox for Low-Voltage High-Speed High-Temperature (Up to 250 ^\hbox ) Nonvolatile Memory Technology von Cui, Sharon, Cheng-Yi Peng, Wenqi Zhang, Xiao Sun, Jie Yang, Zuoguang Liu, Kornblum, Lior, Eizenberg, Moshe, Ma, T P

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Improved Air Spacer for Highly Scaled CMOS Technology von Cheng, Kangguo, Park, Chanro, Wu, Heng, Li, Juntao, Nguyen, Son, Zhang, Jingyun, Wang, Miaomiao, Mehta, Sanjay, Liu, Zuoguang, Conti, Richard, Loubet, Nicolas J., Frougier, Julien, Greene, Andrew, Yamashita, Tenko, Haran, Balasubramanian, Divakaruni, Rama

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Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy von Liu, Zuoguang, Ma, T. P.

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Effect of H on interface properties of Al2O3/In0.53Ga0.47As von Liu, Zuoguang, Cui, Sharon, Shekhter, Pini, Sun, Xiao, Kornblum, Lior, Yang, Jie, Eizenberg, Moshe, Chang-Liao, K. S., Ma, T. P.

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Effect of hydrogen on the chemical bonding and band structure at the Al 2 O 3 /In 0.53 Ga 0.47 As interface von Shekhter, Pini, Kornblum, Lior, Liu, Zuoguang, Cui, Sharon, Ma, T. P., Eizenberg, Moshe

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Evaluation of a new interferon-gamma release assay and comparison to tuberculin skin test during a tuberculosis outbreak von Song, Qisheng, Guo, Huishan, Zhong, Hui, Liu, Zuoguang, Chen, Xiuqin, Wang, Cui, Touzjian, Neal, Lv, Yichen, Lu, Xiwei, Wang, Qi

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Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics von Reiner, James W., Cui, Sharon, Liu, Zuoguang, Wang, Miaomiao, Ahn, Charles H., Ma, T. P.

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Intrinsic effective mobility extraction with extremely scaled gate dielectrics von Liu, Zuoguang, Guo, Dechao, Xiu, Kai, Henson, William Kirklen, Oldiges, Philip J.

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Inelastic electron tunneling spectroscopy study of ultrathin Al 2 O 3 - TiO 2 dielectric stack on Si von Liu, Zuoguang, Cui, Sharon, Kornblum, Lior, Eizenberg, Moshe, Chang, Ming-Feng, Ma, T. P.

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Effect of H on interface properties of Al 2 O 3 /In 0.53 Ga 0.47 As von Liu, Zuoguang, Cui, Sharon, Shekhter, Pini, Sun, Xiao, Kornblum, Lior, Yang, Jie, Eizenberg, Moshe, Chang-Liao, K. S., Ma, T. P.

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High-Quality hbox Al 2 hbox O 3 for Low-Voltage High-Speed High-Temperature (Up to 250 [compfn] hbox C ) Nonvolatile Memory Technology von Cui, Sharon, Peng, Cheng-Yi, Zhang, Wenqi, Sun, Xiao, Yang, Jie, Liu, Zuoguang, Kornblum, Lior, Eizenberg, Moshe, Ma, T P

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High-Quality [Formula Omitted] for Low-Voltage High-Speed High-Temperature (Up to 250 [Formula Omitted]) Nonvolatile Memory Technology von Cui, Sharon, Peng, Cheng-Yi, Zhang, Wenqi, Sun, Xiao, Yang, Jie, Liu, Zuoguang, Kornblum, Lior, Eizenberg, Moshe, Ma, T. P

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GERMANIUM-BASED LASER DIODE von Cheng, Kangguo, Liu, Zuoguang

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