Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer von Voronenkov, V V, Leonidov, A A, Bochkareva, N I, Gorbunov, R I, Latyshev, P E, Lelikov, Y S, Kogotkov, V S, Zubrilov, A S, Shreter, Y G

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Two modes of HVPE growth of GaN and related macrodefects von Voronenkov, V. V., Bochkareva, N. I., Gorbunov, R. I., Latyshev, P. E., Lelikov, Y. S., Rebane, Y. T., Tsyuk, A. I., Zubrilov, A. S., Popp, U. W., Strafela, M., Strunk, H. P., Shreter, Y. G.

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Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, P. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

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On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire von Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., Gorbunov, R. I., Latishev, F. E., Bochkareva, N. I., Lelikov, Y. S., Tarkhin, D. V., Smirnov, A. N., Davydov, V. Y., Sheremet, I. A., Shreter, Y. G.

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Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates von Kuznetsov, N. I., Nikolaev, A. E., Zubrilov, A. S., Melnik, Yu. V., Dmitriev, V. A.

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Investigation of n-GaN/p-SiC/n-SiC heterostructures von Lebedev, A.A., Ledyaev, O.Yu, Strel’chuk, A.M., Kuznetsov, A.N., Nikolaev, A.E., Zubrilov, A.S., Volkova, A.A.

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Spontaneous and stimulated emission from photopumped GaN grown on SiC von Zubrilov, A. S., Nikolaev, V. I., Tsvetkov, D. V., Dmitriev, V. A., Irvine, K. G., Edmond, J. A., Carter, C. H.

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Growth of AlGaN on Si(111) by gas source molecular beam epitaxy von Nikishin, S. A., Faleev, N. N., Zubrilov, A. S., Antipov, V. G., Temkin, H.

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Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures von Lebedev, Alexander A., Kuznetsov, Alexey N., Nikolaev, A.E., Ledyaev, O. Yu, Cherenkov, A.E., Strel'chuk, Anatoly M., Volkova, A.A., Zubrilov, A.S., Seredova, Natasha V.

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High-dose Al-implanted 4H-SiC p+-n-n+ junctions von Kalinina, E., Kholujanov, G., Solov’ev, V., Strel’chuk, A., Zubrilov, A., Kossov, V., Yafaev, R., Kovarski, A. P., Hallén, A., Konstantinov, A., Karlsson, S., Adås, C., Rendakova, S., Dmitriev, V.

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Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers von Kalinina, E., Kholujanov, G., Zubrilov, A., Solov’ev, V., Davydov, D., Tregubova, A., Sheglov, M., Kovarskii, A., Yagovkina, M., Violina, G., Pensl, G., Hallén, A., Konstantinov, A., Karlsson, S., Rendakova, S., Dmitriev, V.

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Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions von Konstantinov, Andrey O., Davydov, D.V., Kalinina, Evgenia V., Kholuyanov, G., Strel'chuk, Anatoly M., Hallén, Anders, Skuratov, V.A., Staňo, J., Zubrilov, A.S., Onushkin, G.

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Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia von Zubrilov, A. S., Nikishin, S. A., Kipshidze, G. D., Kuryatkov, V. V., Temkin, H., Prokofyeva, T. I., Holtz, M.

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Two modes of HVPE growth of GaN and related macrodefects von Voronenkov, V V, Bochkareva, N I, Gorbunov, R I, Latyshev, P E, Lelikov, Y S, Rebane, Y T, Tsyuk, A I, Zubrilov, A S, Popp, U W, Strafela, M, Strunk, H P, Shreter, Y G

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Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates von Mynbaev, K. D., Mynbaeva, M. G., Zubrilov, A. S., Seredova, N. V.

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Optical confinement and threshold currents in III–V nitride heterostructures: Simulation von Bougrov, V. E., Zubrilov, A. S.

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates von Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Voronenkov, V. V., Rebane, Yu. T., Zubrilov, A. S., Gorbunov, R. I., Latyshev, P. E., Bochkareva, N. I., Lelikov, Yu. S., Tarhin, D. V., Smirnov, A. N., Davydov, V. Yu, Shreter, Yu. G.

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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Latyshev, P. E., Lelikov, Yu. S., Rebane, Yu. T., Tsyuk, A. I., Shreter, Yu. G.

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4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates von Bauman, D., Ivantsov, V., Nikitina, Irina P., Dmitriev, Vladimir, Hofman, D., Morozov, A., Sukhoveyev, V., Rendakova, S.V., Kuznetsov, N.I., Zubrilov, A.S., Vida, György

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Thick GaN Films Grown on Patterned Sapphire Substrates von Voronenkov, Vladislav, Gorbunov, Ruslan, Tsyuk, Alexander, Latyshev, Philippe, Lelikov, Yuriy, Rebane, Yuriy, Zubrilov, Andrey, Bochkareva, Natalia, Shreter, Yuriy

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