Effects of temperature and doping concentration on the piezoresistive property of vanadium dioxide thin film von Inomata, Naoki, Usuda, Takuto, Yamamoto, Yuji, H. Zoellner, Marvin, Costina, Ioan, Ono, Takahito

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Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits von Liu, Yujia, Gradwohl, Kevin-P., Lu, Chen-Hsun, Remmele, Thilo, Yamamoto, Yuji, Zoellner, Marvin H., Schroeder, Thomas, Boeck, Torsten, Amari, Houari, Richter, Carsten, Albrecht, Martin

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Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device von Corley-Wiciak, Cedric, Richter, Carsten, Zoellner, Marvin H., Zaitsev, Ignatii, Manganelli, Costanza L., Zatterin, Edoardo, Schülli, Tobias U., Corley-Wiciak, Agnieszka A., Katzer, Jens, Reichmann, Felix, Klesse, Wolfgang M., Hendrickx, Nico W., Sammak, Amir, Veldhorst, Menno, Scappucci, Giordano, Virgilio, Michele, Capellini, Giovanni

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Characterization and prevention of humidity related degradation of atomic layer deposited Al2O3 von Rückerl, Andreas, Zeisel, Roland, Mandl, Martin, Costina, Ioan, Schroeder, Thomas, Zoellner, Marvin H.

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Improving Epitaxial Growth of γ‐Al2O3 Films via Sc2O3/Y2O3 Oxide Buffers von Gougam, Sliman, Schubert, Markus Andreas, Stolarek, David, Thapa, Sarad Bahadur, Zoellner, Marvin Hartwig

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Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading von Skibitzki, Oliver, Zoellner, Marvin H., Rovaris, Fabrizio, Schubert, Markus Andreas, Yamamoto, Yuji, Persichetti, Luca, Di Gaspare, Luciana, De Seta, Monica, Gatti, Riccardo, Montalenti, Francesco, Capellini, Giovanni

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Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X‑ray Diffraction Microscopy von Zoellner, Marvin H, Richard, Marie-Ingrid, Chahine, Gilbert A, Zaumseil, Peter, Reich, Christian, Capellini, Giovanni, Montalenti, Francesco, Marzegalli, Anna, Xie, Ya-Hong, Schülli, Tobias U, Häberlen, Maik, Storck, Peter, Schroeder, Thomas

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Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X‑ray Nanodiffraction von Richard, Marie-Ingrid, Zoellner, Marvin H, Chahine, Gilbert A, Zaumseil, Peter, Capellini, Giovanni, Häberlen, Maik, Storck, Peter, Schülli, Tobias U, Schroeder, Thomas

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Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation von Janowitz, Christoph, Mahmoodinezhad, Ali, Kot, Małgorzata, Morales, Carlos, Naumann, Franziska, Plate, Paul, Marvin Hartwig Zoellner, Bärwolf, Florian, Stolarek, David, Wenger, Christian, Henkel, Karsten, Jan Ingo Flege

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Full Picture of Lattice Deformation in a Ge1 - xSnx Micro-Disk by 5D X-ray Diffraction Microscopy von Corley-Wiciak, Cedric, Zoellner, Marvin H, Corley-Wiciak, Agnieszka A, Rovaris, Fabrizio, Zatterin, Edoardo, Zaitsev, Ignatii, Sfuncia, Gianfranco, Nicotra, Giuseppe, Spirito, Davide, von den Driesch, Nils, Manganelli, Costanza L, Marzegalli, Anna, Schulli, Tobias U, Buca, Dan, Montalenti, Francesco, Capellini, Giovanni, Richter, Carsten

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The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks von Zaitsev, Ignatii, Corley-Wiciak, Agnieszka Anna, Corley-Wiciak, Cedric, Marvin Hartwig Zoellner, Richter, Carsten, Zatterin, Edoardo, Virgilio, Michele, Martín-García, Beatriz, Spirito, Davide, Costanza Lucia Manganelli

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Full Picture of Lattice Deformation in a Ge 1 - x Sn x Micro-Disk by 5D X-ray Diffraction Microscopy von Corley-Wiciak, Cedric, Zoellner, Marvin H, Corley-Wiciak, Agnieszka A, Rovaris, Fabrizio, Zatterin, Edoardo, Zaitsev, Ignatii, Sfuncia, Gianfranco, Nicotra, Giuseppe, Spirito, Davide, von den Driesch, Nils, Manganelli, Costanza L, Marzegalli, Anna, Schulli, Tobias U, Buca, Dan, Montalenti, Francesco, Capellini, Giovanni, Richter, Carsten

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Compositional dependence of the band-gap of Ge1−x−ySixSny alloys von Wendav Torsten, Fischer, Inga A, Montanari, Michele, Zoellner, Marvin Hartwig, Klesse, Wolfgang, von den Driesch Nils, Oehme, Michael, Buca Dan, Schulze Jörg

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Dynamics of crosshatch patterns in heteroepitaxy von Rovaris, Fabrizio, Zoellner, Marvin H., Zaumseil, Peter, Marzegalli, Anna, Di Gaspare, Luciana, De Seta, Monica, Schroeder, Thomas, Storck, Peter, Schwalb, Georg, Capellini, Giovanni, Montalenti, Francesco

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Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells von Persichetti, Luca, Montanari, Michele, Ciano, Chiara, Di Gaspare, Luciana, Ortolani, Michele, Baldassarre, Leonetta, Zoellner, Marvin, Mukherjee, Samik, Moutanabbir, Oussama, Capellini, Giovanni, Virgilio, Michele, De Seta, Monica

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Plasma Enhanced Complete Oxidation of Ultrathin Epitaxial Praseodymia Films on Si(111) von Kuschel, Olga, Dieck, Florian, Wilkens, Henrik, Gevers, Sebastian, Rodewald, Jari, Otte, Christian, Zoellner, Marvin Hartwig, Niu, Gang, Schroeder, Thomas, Wollschläger, Joachim

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Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry von Spirito, Davide, von den Driesch, Nils, Manganelli, Costanza Lucia, Zoellner, Marvin Hartwig, Corley-Wiciak, Agnieszka Anna, Ikonic, Zoran, Stoica, Toma, Grützmacher, Detlev, Buca, Dan, Capellini, Giovanni

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Stoichiometry–structure correlation of epitaxial Ce1−xPrxO2−δ (x=0−1) thin films on Si(111) von Zoellner, Marvin Hartwig, Zaumseil, Peter, Wilkens, Henrik, Gevers, Sebastian, Wollschläger, Joachim, Bäumer, Marcus, Xie, Ya-Hong, Niu, Gang, Schroeder, Thomas

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Improving Epitaxial Growth of γ‐Al 2 O 3 Films via Sc 2 O 3 /Y 2 O 3 Oxide Buffers von Gougam, Sliman, Schubert, Markus Andreas, Stolarek, David, Thapa, Sarad Bahadur, Zoellner, Marvin Hartwig

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Heterogeneities among credit risk parameter distributions: the modality defines the best estimation method von Gürtler, Marc, Zöllner, Marvin

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