Technology development of a high-density 32-channel 16-Gb/s optical data link for optical interconnection applications for the optoelectronic technology consortium (OETC) von Yiu-Man Wong, Muehlner, D.J., Faudskar, C.C., Buchholz, D.B., Fishteyn, M., Brandner, J.L., Parzygnat, W.J., Morgan, R.A., Mullally, T., Leibenguth, R.E., Guth, G.D., Focht, M.W., Glogovsky, K.G., Zilko, J.L., Gates, J.V., Anthony, P.J., Tyrone, B.H., Ireland, T.J., Lewis, D.H., Smith, D.F., Nati, S.F., Lewis, D.K., Rogers, D.L., Aispain, H.A., Gowda, S.M., Walker, S.G., Kwark, Y.H., Bates, R.J.S., Kuchta, D.M., Crow, J.D.

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Enabling Terabit Systems through MOVPE von Campbell, K.T., Joyner, C.H., Ebert, C.W., Robertson, A., Wilt, D.P., Zilko, J.L.

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Thermodynamic interpretation of quaternary (InGaAsP) layer uniformity grown by low-pressure metalorganic vapor phase epitaxy von JORDAN, A. S, ROBERTSON, A, ZILKO, J. L

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Pt/Ti/p-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing von KATZ, A, DAUTREMONT-SMITH, W. C, LAHAV, A, CHU, S. N. G, THOMAS, P. M, KOSZI, L. A, LEE, J. W, RIGGS, V. G, BROWN, R. L, NAPHOLTZ, S. G, ZILKO, J. L

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Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source von Zilko, J.L., Davisson, P.S., Luther, L., Trapp, K.D.C.

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Reconfigurable binary optical routing switches with fan-out based on the integration of GaAs/AlGaAs surface-emitting lasers and heterojunction phototransistors von Bo Lu, Ping Zhou, Yin-Chen Lu, Cheng, J., Leibenguth, R.E., Adams, A.C., Zilko, J.L., Zolper, J.C., Lear, K.L., Chalmers, S.A., Vawter, G.A.

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Binary optical switch and programmable optical logic gate based on the integration of GaAs/AlGaAs surface-emitting lasers and heterojunction phototransistors von Bo Lu, Ping Zhou, Lu, Y., Cheng, J., Leibenguth, R.E., Adams, A.C., Zilko, J.L., Lear, K.L., Zolper, J.C., Chalmers, S.A., Vawter, G.A.

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Enhancement of photoluminescence from DX centers in AlGaAs heterostructures von LIVESCU, G, ASOM, M. T, LUTHER, L, ZILKO, J. L, TRAPP, K. D. C, FINKMAN, E

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Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers von Zilko, J.L., Ketelsen, L.J.P., Twu, Y., Wilt, D.P., Napoltz, S.G., Blaha, J.P., Strege, K.E., Riggs, V.G., Van Haren, D.L., Leung, S.Y., Nitzche, P.M., Long, J.A., Roxlo, C.B., Przyblek, G., Lopata, J., Focht, M.W., Koszi, J.

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Effect of mesa shape on the planarity of InP regrowths performed by atmospheric pressure and low pressure selective metalorganic vapor phase epitaxy von Zilko, J.L., Segner, B.P., Chakrabarti, U.K., Logan, R.A., Lopata, J., Van Haren, D.L., Long, J.A.

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Multiwavelength DFB laser array with integrated spot size converters von Ketelsen, L.J.P., Grenko, J.A., Sputz, S.K., Focht, M.W., Vandenberg, J.M., Johnson, J.E., Reynolds, C.L., Geary, J.M., Levkoff, J., Glogovsky, K.G., Stampone, D.V., Chu, S.N.G., Siegrist, T., Pernell, T.L., Walters, F.S., Sheridan-Eng, J., Lentz, J.L., Alam, M.A., People, R., Hybertsen, M.S., Isaacs, E.D., Evans-Lutterodt, K., Leibenguth, R.E., Przybyiek, G.J., Zhang, L., Feder, K., Shunk, S., Tennant, D.M., Peticolas, L.J., Romero, D.M., Freund, J.M., Falk, B.S., Tzafaras, N.N., Smith, L.E., Luther, L.C., Geva, M., Gault, W.A., Zilko, J.L.

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Integrated external cavity distributed Bragg reflector laser von DUTTA, N. K, CELLA, T, ZILKO, J. L, PICCIRILLI, A. B, BROWN, R. L, NAPHOLTZ, S. G

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InGaAsP laser with semi-insulating current confining layers von DUTTA, N. K, ZILKO, J. L, CELLA, T, ACKERMAN, D. A, SHEN, T. M, NAPHOLTZ, S. G

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Photoluminescence study of the damage distribution in proton-bombarded (Al,Ga)As-GaAs-(Al,Ga)As double heterostructure von SWAMINATHAN, V, SCHWARTZ, B, SINGH, S, ZILKO, J. L

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Transient arsine generation during opening of solid source MBE chambers von Asom, M.T., Mosovsky, J., Leibenguth, R.E., Zilko, J.L., Cadet, G.

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A comparative study of (100) GaAs films grown by liquid-phase epitaxy, molecular-beam epitaxy and metal-organic chemical vapor deposition by Raman spectroscopy von Swaminathan, V., Jayaraman, A., Zilko, J.L., Stall, R.A.

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Low pressure MOCVD in a vertical reactor: growth and characterization of InGaAsP on (100)InP for 1.3 μm lasers von McCrary, V.R., Van Haren, D.L., Zilko, J.L., Blaha, J., Slusky, S.E.G., Lee, J.W., Chu, S.N.G., Thomas, P., Swaminathan, V.

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Growth of InGaAsP/InP single-quantum-well and multiple-quantum well-structures by low-pressure metal-organic chemical vapor deposition von MCCRARY, V. R, LEE, J. W, CHU, S. N. G, SLUSKY, S. E. G, BRELVI, M. A, LIVESCU, G, THOMAS, P. M, KETELSEN, L. J. P, ZILKO, J. L

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Characterization of GaAs films grown by metalorganic chemical vapor deposition von SWAMINATHAN, V, VAN HAREN, D. L, SZILKO, J. L, LU, P. Y, SCHUMAKER, N. E

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Vertical enhancement-mode InP MISFET's fabricated on n-type substrate von Chu-Liang Cheng, Ota, Y., Tell, B., Zilko, J.L., Forrest, S.R., Fleming, J.W.

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