Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate von Xia, Yuanyang, Zhu, Youhua, Liu, Chunhua, Wei, Hongyuan, Zhang, Tingting, Lee, Yeeheng, Zhu, Tinggang, wang, Meiyu, Yi, Li, Ge, Mei

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High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics von Zhou, Feng, Xu, Weizong, Ren, Fangfang, Zhou, Dong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Zhu, Tinggang, Lu, Hai

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Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability von Zhou, Feng, Xu, Weizong, Ren, Fangfang, Zhou, Dong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Zhu, Tinggang, Lu, Hai

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High-VTH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped p-GaN Engineering von Jin, Yulei, Zhou, Feng, Xu, Weizong, Wang, Zhengpeng, Zhou, Tianyang, Zhou, Dong, Ren, Fangfang, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Ye, Jiandong, Zheng, Youdou, Lu, Hai

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High- V TH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent V TH Stability Enabled by Mg-Doped p-GaN Engineering von Jin, Yulei, Zhou, Feng, Xu, Weizong, Wang, Zhengpeng, Zhou, Tianyang, Zhou, Dong, Ren, Fangfang, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Ye, Jiandong, Zheng, Youdou, Lu, Hai

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High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing von Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Cheng, Kai, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Liu, Bin, Xiu, Xiangqian, Han, Ping, Shi, Yi, Zhang, Rong, Zheng, Youdou

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High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022) von Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Cheng, Kai, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Liu, Bin, Xiu, Xiangqian, Han, Ping, Shi, Yi, Zhang, Rong, Zheng, Youdou

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Normally-off GaN HEMTs with InGaN p-gate cap layer formed by polarization doping von Zeng, Changkun, Xu, Weizong, Xia, Yuanyang, Wang, Ke, Ren, Fangfang, Zhou, Dong, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai

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GALLIUM NITRIDE SEMICONDUCTOR DEVICE WITH IMPROVED TERMINATION SCHEME von Zhu, Tinggang

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600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications von Pophristic, Milan, Murphy, Michael, Peres, Boris, Hierl, Tom, Zhu, Ting Gang, Liu, Lin Lin, Pabisz, Marek

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Normally off gallium nitride field effect transistors (FET) von Bhalla, Anup, Zhu, Tinggang

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A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure von Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Xiu, Xiangqian, Zhang, Rong, Zheng, Youdou

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NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET) von Bhalla Anup, Zhu Tinggang

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Normally off gallium nitride field effect transistors (FET) von Bhalla Anup, Zhu Tinggang

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Gallium nitride semiconductor device with improved forward conduction von ZHU TINGGANG

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Gallium nitride semiconductor device with improved forward conduction von Zhu, TingGang

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Gallium nitride semiconductor device with improved forward conduction von Zhu, TingGang

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Normally off gallium nitride field effect transistors (FET) von ZHU TINGGANG, BHALLA ANUP

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Megawatt wind power simulation test system and test method von ZHU TINGGANG, SHAO FENG

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SCHOTTKY ELECTRODE STRUCTURE AND SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF von LI, YIHENG, ZHU, TINGGANG, ZHANG, TINGTING

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