State of the Art and Future Perspectives in Advanced CMOS Technology von Radamson, Henry H., Zhu, Huilong, Wu, Zhenhua, He, Xiaobin, Lin, Hongxiao, Liu, Jinbiao, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Cui, Hushan, Gao, Jianfeng, Yang, Hong, Du, Yong, Xu, Buqing, Li, Ben, Zhao, Xuewei, Yu, Jiahan, Dong, Yan, Wang, Guilei

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Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application von Li, Chen, Lin, Hongxiao, Li, Junjie, Yin, Xiaogen, Zhang, Yongkui, Kong, Zhenzhen, Wang, Guilei, Zhu, Huilong, Radamson, Henry H.

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Negative-Capacitance Characteristics in a Steady-State Ferroelectric Capacitor Made of Parallel Domains von Zhu, Zhengyong, Zhu, Huilong, Wang, Sumei, Liu, Yongbo, Yin, Xiaogen, Jia, Kunpeng, Zhao, Chao

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An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs von Xie, Xin, Zhu, Huilong, Zhang, Mengying, Liu, Xiaonian, Dai, Lihua, Bi, Dawei, Hu, Zhiyuan, Zhang, Zhengxuan, Zou, Shichang

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Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket von Xu, Miao, Zhu, Huilong, Zhao, Lichuan, Yin, Huaxiang, Zhong, Jian, Li, Junfeng, Zhao, Chao, Chen, Dapeng, Ye, Tianchun

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Quantitative Demonstration of Wear Rate and Dissipation Energy during Tension-Torsion Cyclic Loading of Steel Wires with Fretting Contact in Different Environmental Media von Wang, Dagang, Wang, Xiangru, Xie, Guozheng, Zhu, Huilong

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Study of selective isotropic etching Si1−xGex in process of nanowire transistors von Li, Junjie, Wang, Wenwu, Li, Yongliang, Zhou, Na, Wang, Guilei, Kong, Zhenzhen, Fu, Jianyu, Yin, Xiaogen, Li, Chen, Wang, Xiaolei, Yang, Hong, Ma, Xueli, Han, Jianghao, Zhang, Jing, Wei, Yijun, Hu, Tairan, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Radamson, Henry H.

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Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors von Huang, Weixing, Zhu, Huilong, Wu, Zhenhua, Yin, Xiaogen, Huo, Qiang, Jia, Kunpeng, Li, Yangyang, Zhang, Yongkui

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Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS) von Wang, Guilei, Kolahdouz, M., Luo, Jun, Qin, Changliang, Gu, Shihai, Kong, Zhenzhen, Yin, Xiaogen, Xiong, Wenjuan, Zhao, Xuewei, Liu, Jinbiao, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Wang, Wenwu, Zhao, Chao, Ye, Tianchun, Radamson, Henry H.

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A novel method for source/drain ion implantation for 20 nm FinFETs and beyond von Qin, Changliang, Yin, Huaxiang, Wang, Guilei, Zhang, Yanbo, Liu, Jinbiao, Zhang, Qinzhu, Zhu, Huilong, Zhao, Chao, Radamson, Henry H.

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Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology von Wang, Guilei, Abedin, Ahmad, Moeen, Mahdi, Kolahdouz, Mohammadreza, Luo, Jun, Guo, Yiluan, Chen, Tao, Yin, Huaxiang, Zhu, Huilong, Li, Junfeng, Zhao, Chao, Radamson, Henry H.

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Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation von Liu, Yongbo, Zhu, Huilong, Zhang, Yongkui, Wang, Xiaolei, Huang, Weixing, Li, Chen, Ai, Xuezheng, Wang, Qi

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A Novel Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor von Zhu, Zhengyong, Zhu, Huilong, Xu, Miao, Zhong, Jian, Zhao, Chao, Chen, Dapeng, Ye, Tianchun

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Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications von Xu, Qiuxia, Xu, Gaobo, Zhou, Huajie, Zhu, Huilong, Liang, Qingqing, Liu, Jinbiao, Li, Junfeng, Xiang, Jinjuan, Xu, Miao, Zhong, Jian, Xu, Weijia, Zhao, Chao, Chen, Dapeng, Ye, Tianchun

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Surface Modification of Monolayer MoS2 by Baking for Biomedical Applications von Wang, Yan, Ma, Yuanjun, Shi, Jinping, Yan, Xiangyu, Luo, Jun, Zhu, Huilong, Jia, Kunpeng, Li, Juan, Zhang, Can Yang

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High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale von Chen, Zhuo, Zhu, Huilong, Wang, Guilei, Wang, Qi, Xiao, Zhongrui, Zhang, Yongkui, Liu, Jinbiao, Lu, Shunshun, Du, Yong, Yu, Jiahan, Xiong, Wenjuan, Kong, Zhenzhen, Du, Anyan, Yan, Zijin, Zheng, Yantong

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Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing von Chen, Zhuo, Zhu, Huilong, Wang, Guilei, Wang, Qi, Xiao, Zhongrui, Zhang, Yongkui, Liu, Jinbiao, Lu, Shunshun, Du, Yong, Yu, Jiahan, Xiong, Wenjuan, Kong, Zhenzhen, Du, Anyan, Yan, Zijin, Zheng, Yantong

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Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors von Li, Junjie, Li, Yongliang, Zhou, Na, Xiong, Wenjuan, Wang, Guilei, Zhang, Qingzhu, Du, Anyan, Gao, Jianfeng, Kong, Zhenzhen, Lin, Hongxiao, Xiang, Jinjuan, Li, Chen, Yin, Xiaogen, Wang, Xiaolei, Yang, Hong, Ma, Xueli, Han, Jianghao, Zhang, Jing, Hu, Tairan, Cao, Zhe, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Luo, Jun, Wang, Wenwu, Radamson, Henry H.

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pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology von Wang, Guilei, Luo, Jun, Liu, Jinbiao, Yang, Tao, Xu, Yefeng, Li, Junfeng, Yin, Huaxiang, Yan, Jiang, Zhu, Huilong, Zhao, Chao, Ye, Tianchun, Radamson, Henry H.

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Overshoot Stress on Ultra-Thin HfO2 High- \kappa Layer and Its Impact on Lifetime Extraction von Guangxing Wan, Tianli Duan, Shuxiang Zhang, Lingli Jiang, Bo Tang, Yan, J., Chao Zhao, Huilong Zhu, HongYu Yu

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