Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack von Zhang, Xichao, Zhou, Yan, Ezawa, Motohiko, Zhao, G. P., Zhao, Weisheng

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Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications von Zhang, Xichao, Zhou, Yan, Song, Kyung Mee, Park, Tae-Eon, Xia, Jing, Ezawa, Motohiko, Liu, Xiaoxi, Zhao, Weisheng, Zhao, Guoping, Woo, Seonghoon

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High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits von Weisheng Zhao, Chappert, C., Javerliac, V., Noziere, J.-P.

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Spintronics for Energy- Efficient Computing: An Overview and Outlook von Guo, Zongxia, Yin, Jialiang, Bai, Yue, Zhu, Daoqian, Shi, Kewen, Wang, Gefei, Cao, Kaihua, Zhao, Weisheng

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Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm von Yang, Nan, Wang, Xinhe, Lin, Xiaoyang, Zhao, Weisheng

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Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance von Wang, Mengxing, Cai, Wenlong, Cao, Kaihua, Zhou, Jiaqi, Wrona, Jerzy, Peng, Shouzhong, Yang, Huaiwen, Wei, Jiaqi, Kang, Wang, Zhang, Youguang, Langer, Jürgen, Ocker, Berthold, Fert, Albert, Zhao, Weisheng

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Ultrafast Magnetization Manipulation Using Single Femtosecond Light and Hot‐Electron Pulses von Xu, Yong, Deb, Marwan, Malinowski, Grégory, Hehn, Michel, Zhao, Weisheng, Mangin, Stéphane

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Analytical Macrospin Modeling of the Stochastic Switching Time of Spin-Transfer Torque Devices von Vincent, Adrien F., Locatelli, Nicolas, Klein, Jacques-Olivier, Zhao, Weisheng S., Galdin-Retailleau, Sylvie, Querlioz, Damien

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Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory von Kang, Wang, Huang, Yangqi, Zheng, Chentian, Lv, Weifeng, Lei, Na, Zhang, Youguang, Zhang, Xichao, Zhou, Yan, Zhao, Weisheng

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Long-distance propagation of short-wavelength spin waves von Liu, Chuanpu, Chen, Jilei, Liu, Tao, Heimbach, Florian, Yu, Haiming, Xiao, Yang, Hu, Junfeng, Liu, Mengchao, Chang, Houchen, Stueckler, Tobias, Tu, Sa, Zhang, Youguang, Zhang, Yan, Gao, Peng, Liao, Zhimin, Yu, Dapeng, Xia, Ke, Lei, Na, Zhao, Weisheng, Wu, Mingzhong

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Calculation of intrinsic spin Hall conductivity by Wannier interpolation von Qiao, Junfeng, Zhou, Jiaqi, Yuan, Zhe, Zhao, Weisheng

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Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory von He Zhang, Wang Kang, Lezhi Wang, Wang, Kang L., Weisheng Zhao

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Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient von Zheng, Zhenyi, Zhang, Yue, Lopez-Dominguez, Victor, Sánchez-Tejerina, Luis, Shi, Jiacheng, Feng, Xueqiang, Chen, Lei, Wang, Zilu, Zhang, Zhizhong, Zhang, Kun, Hong, Bin, Xu, Yong, Zhang, Youguang, Carpentieri, Mario, Fert, Albert, Finocchio, Giovanni, Zhao, Weisheng, Khalili Amiri, Pedram

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Magnetic skyrmions for unconventional computing von Li, Sai, Kang, Wang, Zhang, Xichao, Nie, Tianxiao, Zhou, Yan, Wang, Kang L, Zhao, Weisheng

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Skyrmion-based artificial synapses for neuromorphic computing von Song, Kyung Mee, Jeong, Jae-Seung, Pan, Biao, Zhang, Xichao, Xia, Jing, Cha, Sunkyung, Park, Tae-Eon, Kim, Kwangsu, Finizio, Simone, Raabe, Jörg, Chang, Joonyeon, Zhou, Yan, Zhao, Weisheng, Kang, Wang, Ju, Hyunsu, Woo, Seonghoon

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Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications von Kang, Wang, Ran, Yi, Zhang, Youguang, Lv, Weifeng, Zhao, Weisheng

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Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques von Wang, Mengxing, Cai, Wenlong, Zhu, Daoqian, Wang, Zhaohao, Kan, Jimmy, Zhao, Zhengyang, Cao, Kaihua, Wang, Zilu, Zhang, Youguang, Zhang, Tianrui, Park, Chando, Wang, Jian-Ping, Fert, Albert, Zhao, Weisheng

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Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology von Hao Cai, You Wang, De Barros Naviner, Lirida Alves, Weisheng Zhao

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In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM von Kang, Wang, Wang, Haotian, Wang, Zhaohao, Zhang, Youguang, Zhao, Weisheng

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A Multilevel Cell STT-MRAM-Based Computing In-Memory Accelerator for Binary Convolutional Neural Network von Pan, Yu, Ouyang, Peng, Zhao, Yinglin, Kang, Wang, Yin, Shouyi, Zhang, Youguang, Zhao, Weisheng, Wei, Shaojun

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