Graphene-based Spin Caloritronics von Zeng, Minggang, Feng, Yuanping, Liang, Gengchiau

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Effect of stochastic activation function on reconstruction performance of restricted Boltzmann machines with stochastic magnetic tunnel junctions von Zeng, Minggang, Li, Zitian, Saw, Jing Wen, Chen, Bingjin

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Electric-field effect on magnetic anisotropy of MgO/CoFe/capping structures von Zeng, Minggang, Lourembam, James, Lim, Sze Ter

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Prospects of spintronics based on 2D materials von Feng, Yuan Ping, Shen, Lei, Yang, Ming, Wang, Aizhu, Zeng, Minggang, Wu, Qingyun, Chintalapati, Sandhya, Chang, Ching‐Ray

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Interfacial electric field and spin-orbitronic properties of heavy-metal/CoFe bilayers von Zeng, Minggang, Chen, BingJin, Lim, Sze Ter

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Micromagnetic realization of energy-based models using stochastic magnetic tunnel junctions von Chen, BingJin, Hou, Yubo, Gan, Chee Kwan, Zeng, Minggang

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Large electric field modulation of magnetic anisotropy in MgO/CoFe/Ta structures with monolayer oxide insertion von Zeng, Minggang, Lourembam, James, Lim, Sze Ter

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Electron Transport Properties of Atomic Carbon Nanowires between Graphene Electrodes von Shen, Lei, Zeng, Minggang, Yang, Shuo-Wang, Zhang, Chun, Wang, Xuefeng, Feng, Yuanping

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Graphene-based spin logic gates von Zeng, Minggang, Shen, Lei, Su, Haibin, Zhang, Chun, Feng, Yuanping

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Electrically Tunable In-Plane Anisotropic Magnetoresistance in Topological Insulator BiSbTeSe2 Nanodevices von Sulaev, Azat, Zeng, Minggang, Shen, Shun-Qing, Cho, Soon Khuen, Zhu, Wei Guang, Feng, Yuan Ping, Eremeev, Sergey V, Kawazoe, Yoshiyuki, Shen, Lei, Wang, Lan

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Magnetocrystalline anisotropy and its electric-field-assisted switching of Heusler-compound-based perpendicular magnetic tunnel junctions von Bai, Zhaoqiang, Shen, Lei, Cai, Yongqing, Wu, Qingyun, Zeng, Minggang, Han, Guchang, Feng, Yuan Ping

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In-plane dominant anisotropy stochastic magnetic tunnel junction for probabilistic computing: A Fokker–Planck study von Gan, Chee Kwan, Chen, Bingjin, Zeng, Minggang

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Graphene-based bipolar spin diode and spin transistor: Rectification and amplification of spin-polarized current von Zeng, Minggang, Shen, Lei, Zhou, Miao, Zhang, Chun, Feng, Yuanping

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Spin-dependent thermoelectric effects in graphene-based spin valves von Zeng, Minggang, Huang, Wen, Liang, Gengchiau

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Spin filtering and spin separating effects in U-shaped topological insulator devices von Zeng, Minggang, Liang, Gengchiau

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Charge and spin transport in graphene-based heterostructure von Zeng, Minggang, Shen, Lei, Yang, Ming, Zhang, Chun, Feng, Yuanping

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Visible Surface Plasmon Modes in Single Bi2Te3 Nanoplate von Zhao, Meng, Bosman, Michel, Danesh, Mohammad, Zeng, Minggang, Song, Peng, Darma, Yudi, Rusydi, Andrivo, Lin, Hsin, Qiu, Cheng-Wei, Loh, Kian Ping

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Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High‑k Dielectric Sb2O3 and 2D Semiconductor MoS2 von Liu, Qin, Zuo, Yang, He, Jingyu, Zeng, Minggang, Yang, Tong, Zhou, Jun, Yang, Yulin, Song, Ting Ting, Wang, Shijie, Yang, Ming

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Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High- k Dielectric Sb 2 O 3 and 2D Semiconductor MoS 2 von Liu, Qin, Zuo, Yang, He, Jingyu, Zeng, Minggang, Yang, Tong, Zhou, Jun, Yang, Yulin, Song, Ting Ting, Wang, Shijie, Yang, Ming

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Spintronic devices for high-density memory and neuromorphic computing – A review von Chen, BingJin, Zeng, Minggang, Khoo, Khoong Hong, Das, Debasis, Fong, Xuanyao, Fukami, Shunsuke, Li, Sai, Zhao, Weisheng, Parkin, Stuart S.P., Piramanayagam, S.N., Lim, Sze Ter

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