GaN-based power devices: Physics, reliability, and perspectives von Meneghini, Matteo, De Santi, Carlo, Abid, Idriss, Buffolo, Matteo, Cioni, Marcello, Khadar, Riyaz Abdul, Nela, Luca, Zagni, Nicolò, Chini, Alessandro, Medjdoub, Farid, Meneghesso, Gaudenzio, Verzellesi, Giovanni, Zanoni, Enrico, Matioli, Elison

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Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives von Meneghini, Matteo, De Santi, Carlo, Tibaldi, Alberto, Vallone, Marco, Bertazzi, Francesco, Meneghesso, Gaudenzio, Zanoni, Enrico, Goano, Michele

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Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies von Verzellesi, Giovanni, Saguatti, Davide, Meneghini, Matteo, Bertazzi, Francesco, Goano, Michele, Meneghesso, Gaudenzio, Zanoni, Enrico

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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors von Stockman, Arno, Masin, Fabrizio, Meneghini, Matteo, Zanoni, Enrico, Meneghesso, Gaudenzio, Bakeroot, Benoit, Moens, Peter

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Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements von Bisi, Davide, Meneghini, Matteo, de Santi, Carlo, Chini, Alessandro, Dammann, Michael, Bruckner, Peter, Mikulla, Michael, Meneghesso, Gaudenzio, Zanoni, Enrico

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AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction von Zanoni, Enrico, Meneghini, Matteo, Chini, Alessandro, Marcon, Denis, Meneghesso, Gaudenzio

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Breakdown mechanisms in AlGaN/GaN HEMTs: An overview von Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico

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Trap-state mapping to model GaN transistors dynamic performance von Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

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Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs von Meneghesso, G., Rampazzo, F., Kordos, P., Verzellesi, G., Zanoni, E.

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Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements von Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Stocco, Antonio, Chini, Alessandro, Pantellini, Alessio, Lanzieri, Claudio, Nanni, Antonio, Meneghesso, Gaudenzio, Zanoni, Enrico

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Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling von Fregolent, Manuel, Brusaterra, Enrico, De Santi, Carlo, Tetzner, Kornelius, Würfl, Joachim, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

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Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric von Fregolent, Manuel, Brusaterra, Enrico, De Santi, Carlo, Tetzner, Kornelius, Würfl, Joachim, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

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Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence von Caria, Alessandro, De Santi, Carlo, Buffolo, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

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Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations von Roccato, Nicola, Piva, Francesco, De Santi, Carlo, Buffolo, Matteo, Fregolent, Manuel, Pilati, Marco, Susilo, Norman, Vidal, Daniel Hauer, Muhin, Anton, Sulmoni, Luca, Wernicke, Tim, Kneissl, Michael, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

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Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator von Ruzzarin, Maria, De Santi, Carlo, Yu, Feng, Fatahilah, Muhammad Fahlesa, Strempel, Klaas, Wasisto, Hutomo Suryo, Waag, Andreas, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

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Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling von Caria, Alessandro, Nicoletto, Marco, De Santi, Carlo, Buffolo, Matteo, Huang, Xuanqi, Fu, Houqiang, Chen, Hong, Zhao, Yuji, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

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Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias von Meneghini, Matteo, Stocco, Antonio, Bertin, Marco, Marcon, Denis, Chini, Alessandro, Meneghesso, Gaudenzio, Zanoni, Enrico

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Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes von Fregolent, Manuel, De Santi, Carlo, Buffolo, Matteo, Higashiwaki, Masataka, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

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Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes von Mandurrino, Marco, Verzellesi, Giovanni, Goano, Michele, Vallone, Marco, Bertazzi, Francesco, Ghione, Giovanni, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico

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Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs von Bisi, Davide, Meneghini, Matteo, Marino, Fabio Alessio, Marcon, Denis, Stoffels, Steve, Van Hove, Marleen, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

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