Structure and optical properties of amorphous GeSx films prepared by PLD von PAN, R. K, TAO, H. Z, ZANG, H. C, LIN, C. G, ZHANG, T. J, ZHAO, X. J

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Photoluminescence of ZnO:Sb nanobelts fabricated by thermal evaporation method von Zang, C.H., Su, J.F., Wang, B., Zhang, D.M., Zhang, Y.S.

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Fabrication and photoluminescence of P doped ZnO nanobelts by thermal evaporation method von Zang, C.Y., Zang, C.H., Wang, B., Jia, Z.X., Yue, S.R., Li, Y.S., Yang, H.Q., Zhang, Y.S.

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Production of Arabidopsis thaliana UDP-Sugar Pyrophosphorylase by Pichia pastoris and Its Application in Efficient UDP-Glucose and UDP-Glucuronic Acid Synthesis von Zang, L. X., Du, R. R., Zang, H. C., Wang, F. S., Sheng, J. Z.

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On the optical properties of amorphous Ge–Ga–Se–KBr films prepared by pulsed laser deposition von Pan, R.K., Tao, H.Z., Lin, C.G., Zang, H.C., Zhao, X.J., Zhang, T.J.

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Facile synthesis of Bi2S3 network nanostructure von TANG, C. J, SU, J. F, HU, Q. B, YANG, Y. X, WANG, C. Q, ZHAO, C. H, ZANG, C. H, ZHANG, Y. S

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Growth and optical properties of ZnO microwells by chemical vapor deposition method von Zang, C.H., Liu, Y.C., Zhao, D.X., Zhang, Y.S.

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Negative differential resistance effect induced by bulk and interface defect states in Pt/CeO2-x/Pt resistive memory devices von Wang, B., Zang, C.H.

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Optical Properties of a ZnO/P Nanostructure Fabricated by a Chemical Vapor Deposition Method von Zang, C. H, Zhang, D. M, Tang, C. J, Fang, S. J, Zong, Z. J, Yang, Y. X, Zhao, C. H, Zhang, Y. S

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Optical properties of ZnO nanocrystals embedded in BaF2 film fabricated by magnetron sputtering von Zang, C H, Liu, Y C, Mu, R, Zhao, D X, Ma, J G, Zhang, J Y, Shen, D Z, Fan, X W

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Thermal-induced gradually changes in the optical properties of amorphous GeSe2 film prepared by PLD von PAN, R. K, TAO, H. Z, ZANG, H. C, ZHANG, T. J, ZHAO, X. J

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Optical properties of pulsed laser deposited amorphous (GeSe2)100−x–Bix films von Pan, R. K., Tao, H. Z., Zang, H. C., Zhao, X. J., Zhang, T. J.

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Ceria thin film memristive device by magnetron sputtering method von Liu, L.N., Zang, C.H., Wang, B., Su, W., Xiao, H.Y., Zhang, D.M., Zhang, Y.S.

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Annealing effects on the structure and optical properties of GeSe2 and GeSe4 films prepared by PLD von Pan, R.K., Tao, H.Z., Zang, H.C., Zhao, X.J., Zhang, T.J.

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Acceptor related photoluminescence from ZnO:Sb nanowires fabricated by chemical vapor deposition method von Zang, C.H., Zhao, D.X., Tang, Y., Guo, Z., Zhang, J.Y., Shen, D.Z., Liu, Y.C.

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Acceptor related photoluminescence and field emission of ZnO:P nanostructures von Zang, C.H., Tang, C.J., Wang, B., Wang, D.Q., Liu, L.N., Zhang, D.M., Zhang, Y.S.

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Optical properties of pulsed laser deposited amorphous (GeSe2)100−x –Bi x films von Pan, R. K., Tao, H. Z., Zang, H. C., Zhao, X. J., Zhang, T. J.

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Annealing effects on the structure and optical properties of GeSe(2) and GeSe(4) films prepared by PLD von Pan, R K, Tao, H Z, Zang, H C, Zhao, X J, Zhang, T J

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Thermal-induced gradually changes in the optical properties of amorphous GeSe sub(2) film prepared by PLD von Pan, R K, Tao, H Z, Zang, H C, Zhang, T J, Zhao, X J

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Thermal-induced gradually changes in the optical properties of amorphous GeSe(2) film prepared by PLD von Pan, R K, Tao, H Z, Zang, H C, Zhang, T J, Zhao, X J

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