Frequency-independent equivalent-circuit model for on-chip spiral inductors von Yu Cao, Groves, R.A., Xuejue Huang, Zamdmer, N.D., Plouchart, J.-O., Wachnik, R.A., Tsu-Jae King, Chenming Hu

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Frequency-independent equivalent circuit model for on-chip spiral inductors von Yu Cao, Groves, R.A., Zamdmer, N.D., Plouchart, J.-O., Wachnik, R.A., Xuejue Huang, King, T.-J., Chenming Hu

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Chip-level power-performance optimization through thermally-driven across-chip variation (ACV) reduction von Yu, X., Gluschenkov, O., Zamdmer, N. D., Deng, J., Goplen, B. A., Landis, H. S., Logan, L. R., Culp, J. A., Liang, Y., Cai, M., Lee, W., Rovedo, N., Tamweber, F. D., Lea, D. M., Greene, B. J., Sim, J., Slisher, D. K., Chou, A. I., Chang, P., Trombley, H., Nowak, E. J., Deshpande, S. V., Henson, W. K., Mocuta, A. C., Rim, K.

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Millimeter-wave, Terahertz, and infrared devices von QING HU, DE LANGE, G, DUERR, E. K, KONISTIS, K, LYUBOMIRSKY, I, RAHMAN, A, RIELY, B. P, WILLIAMS, B. S, BIN XU, ZAMDMER, N. D

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Design of wide-band CMOS VCO for multiband wireless LAN applications von Fong, N.H.W., Plouchart, J.-O., Zamdmer, N., Duixian Liu, Wagner, L.F., Plett, C., Tarr, N.G.

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A 1-V 3.8 - 5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology von Fong, N.H.W., Plouchart, J.-O., Zamdmer, N., Duixian Liu, Wagner, L.F., Plett, C., Tarr, N.G.

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SOI CMOS Technology with 360GHz fT NFET, 260GHz fT PFET, and Record Circuit Performance for Millimeter-Wave Digital and Analog System-on-Chip Applications von Sungjae Lee, Jonghae Kim, Daeik Kim, Jagannathan, B., Choongyeun Cho, Johnson, J., Dufrene, B., Zamdmer, N., Wagner, L., Williams, R., Fried, D., Ken Rim, Pekarik, J., Springer, S., Plouchart, J.-O., Freeman, G.

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RTA-Driven Intra-Die Variations in Stage Delay, and Parametric Sensitivities for 65nm Technology von Walsh, B., Utomo, H., Leobandung, E., Mahorowala, A., Mocuta, D., Miyamoto, K., Kumar, M., Huang, S., Gribelyuk, M., Gabor, A., Freeman, G., Dirahoui, B., Deshpande, S., Azuma, A., Chan, A., Maciejewski, E., Herman, J., Berg, G., Zimmerman, J., Kimura, H., Nowak, E.J., Logan, R., Glushchenkov, O., Zamdmer, N., Ahsan, I., Walsh, B., Utomo, H., Leobandung, E., Mahorowala, A., Mocuta, D., Miyamoto, K., Kumar, M., Huang, S., Gribelyuk, M., Gabor, A., Freeman, G., Dirahoui, B., Deshpande, S., Azuma, A., Chan, A., Maciejewski, E., Herman, J., Berg, G., Zimmerman, J., Kimura, H., Nowak, E.J., Logan, R., Glushchenkov, O., Zamdmer, N., Ahsan, I.

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High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell von Leobandung, E., Nayakama, H., Mocuta, D., Miyamoto, K., Angyal, M., Meer, H.V., McStay, K., Ahsan, I., Allen, S., Azuma, A., Belyansky, M., Bentum, R.-V., Cheng, J., Chidambarrao, D., Dirahoui, B., Fukasawa, M., Gerhardt, M., Gribelyuk, M., Halle, S., Harifuchi, H., Harmon, D., Heaps-Nelson, J., Hichri, H., Ida, K., Inohara, M., Inouc, I.C., Jenkins, K., Kawamura, T., Kim, B., Ku, S.-K., Kumar, M., Lane, S., Liebmann, L., Logan, R., Melville, I., Miyashita, K., Mocuta, A., O'Neil, P., Ng, M.-F., Nogami, T., Nomura, A., Norris, C., Nowak, E., Ono, M., Panda, S., Penny, C., Radens, C., Ramachandran, R., Ray, A., Rhee, S.-H., Ryan, D., Shinohara, T., Sudo, G., Sugaya, F., Strane, J., Tan, Y., Tsou, L., Wang, L., Wirbeleit, F., Wu, S., Yamashita, T., Yan, H., Ye, Q., Yoneyama, D., Zamdmer, D., Zhong, H., Zhu, H., Zhu, W., Agnello, P., Bukofsky, S., Bronner, G., Crabbe, E., Freeman, G., Huang, S.-F., Ivers, T., Kuroda, H., McHerron, D., Pellerin, J., Toyoshima, Y., Subbanna, S., Kepler, N., Su, L.

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Reduction of RTA-driven intra-die variation via model-based layout optimization von Scott, J.C., Gluschenkov, O., Goplen, B., Landis, H., Nowak, E., Clougherty, F., Mocuta, A., Hook, T., Zamdmer, N., Lai, C.W., Eller, M., Chidambarrao, D., Yu, J., Chang, P., Ferris, J., Deshpande, S., Li, Y., Shang, H., Hefferon, G., Divakaruni, R., Crabbe, E., Chen, X.

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ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm2 SRAM cell von Cheng, K., Khakifirooz, A., Kulkarni, P., Ponoth, S., Haran, B., Kumar, A., Adam, T., Reznicek, A., Loubet, N., He, H., Kuss, J., Wang, M., Levin, T. M., Monsieur, F., Liu, Q., Sreenivasan, R., Cai, J., Kimball, A., Mehta, S., Luning, S., Zhu, Y., Zhu, Z., Yamamoto, T., Bryant, A., Lin, C., Naczas, S., Jagannathan, H., Edge, L. F., Allegret-Maret, S., Dube, A., Kanakasabapathy, S., Schmitz, S., Inada, A., Seo, S., Raymond, M., Zhang, Z., Yagishita, A., Demarest, J., Li, J., Hopstaken, M., Berliner, N., Upham, A., Johnson, R., Holmes, S., Standaert, T., Smalley, M., Zamdmer, N., Ren, Z., Wu, T., Bu, H., Paruchuri, V., Sadana, D., Narayanan, V., Haensch, W., O'Neill, J., Hook, T., Khare, M., Doris, B.

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Technology-Model-Product Parallel Design for High Performance and Rapid Time to Market 65nm Technology-Generation Microprocessors von Logan, L.R., Greene, B.J., McStay, K., Liang, Q., Na, M.-H., Nowak, E., Ku, S.-H., Friedrich, J., Clougherty, F., Dufrene, B., Zamdmer, N., Chidambarrao, D., Williams, R., McCullen, J., Slisher, D., Springer, S., Crabbe, E., Freeman, G.

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ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm2 SRAM cell von Cheng, K., Khakifirooz, A., Kulkarni, P., Ponoth, S., Haran, B., Kumar, A., Adam, T., Reznicek, A., Loubet, N., He, H., Kuss, J., Wang, M., Levin, T. M., Monsieur, F., Liu, Q., Sreenivasan, R., Cai, J., Kimball, A., Mehta, S., Luning, S., Zhu, Y., Zhu, Z., Yamamoto, T., Bryant, A., Lin, C., Naczas, S., Jagannathan, H., Edge, L. F., Allegret-Maret, S., Dube, A., Kanakasabapathy, S., Schmitz, S., Inada, A., Seo, S., Raymond, M., Zhang, Z., Yagishita, A., Demarest, J., Li, J., Hopstaken, M., Berliner, N., Upham, A., Johnson, R., Holmes, S., Standaert, T., Smalley, M., Zamdmer, N., Ren, Z., Wu, T., Bu, H., Paruchuri, V., Sadana, D., Narayanan, V., Haensch, W., O'Neill, J., Hook, T., Khare, M., Doris, B.

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High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node von Narasimha, S., Ajmera, A., Park, H., Schepis, D., Zamdmer, N., Jenkins, K.A., Plouchart, J.-O., Lee, W.-H., Mezzapelle, J., Bruley, J., Doris, B., Sleight, J.W., Fung, S.K., Ku, S.H., Mocuta, A.C., Yang, I., Gilbert, P.V., Muller, K.P., Agnello, P., Welser, J.

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