Ultra shallow doping profiling with SIMS von Zalm, P C

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Quantitative considerations in medium energy ion scattering depth profiling analysis of nanolayers von Zalm, P.C., Bailey, P., Reading, M.A., Rossall, A.K., van den Berg, J.A.

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The Thickogram: a method for easy film thickness measurement in XPS von Cumpson, Peter J

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Overlayer corrections in XPS von Zalm, P. C.

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Ge segregation at Si/Si1-xGex interfaces grown by molecular beam epitaxy von ZALM, P. C, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A

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Mechanisms of implant damage annealing and transient enhanced diffusion in Si von Cowern, N. E. B., van de Walle, G. F. A., Zalm, P. C., Vandenhoudt, D. W. E.

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REACTIONS OF POINT-DEFECTS AND DOPANT ATOMS IN SILICON von COWERN, NEB, VANDEWALLE, GFA, ZALM, PC, OOSTRA, DJ

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Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and Xenon ions von ZALM, P. C

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Problems in the deconvolution of SIMS depth profiles using delta-doped test structures von Zalm, P.C., de Kruif, R.C.M.

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Diffusion in strained Si(Ge) von Cowern, NE, Zalm, PC, van der Sluis P, Gravesteijn, DJ, de Boer WB

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Quantitative sputtering von Zalm, P. C.

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Impurity migration during SIMS depth profiling von Vriezema, C. J., Zalm, P. C.

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Oxygen-mediated Mn diffusion in magnetic tunnel junctions comprising a nano-oxide layer von Boeve, H., Vanhelmont, F., Zalm, P.C.

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Si ultrashallow p+n junctions using low-energy boron implantation von BOUSETTA, A, VAN DEN BERG, J. A, ARMOUR, D. G, ZALM, P. C

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Fluorescence-based photoelectron features in Auger spectra von Zalm, P. C., Toussaint, S. L. G., Crombeen, J. E.

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X-ray-induced Metal Reduction in Polymer Hosts von Vreugdenhil, F., Hagenhoff, B., Zalm, P. C.

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Formation and bonding structure of silicon nitride by 20-keV N+ ion implantation von HASEGAWA, S, ZALM, P. C

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Experimental study of diffusion and interface segregation of P in an LPCVD Si-carbon emitter structure von THEUNISSEN, M. J. J, MARTENS, M. C, CLEGG, J. B, ZALM, P. C, VANDENHOUDT, D. E. W

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Sharp boron spikes in silicon grown by fast gas switching chemical vapor deposition von ROKSNOER, P. J, MAES, J. W. F. M, VINK, A. T, VRIEZEMA, C. J, ZALM, P. C

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Bonding and electronic structures of amorphous SiNx:H von HASEGAWA, S, TSUKAO, T, ZALM, P. C

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