Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high-power flip-chip LEDs von Chernyakov, A. E., Bulashevich, K. A., Karpov, S. Yu, Zakgeim, A. L.

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Features of Operation of High-Power AlInGaN LEDs at High Pulse Currents von Zakgeim, A. L., Ivanov, A. E., Chernyakov, A. E.

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Thermal Resistance of LEDs Based on a Narrow-Gap InAsSb Solid Solution von Zakgeim, A. L., Klimov, A. A., Lukhmyrina, T. S., Matveev, B. A., Chernyakov, A. E.

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A comprehensive study of impulse pumping of Ti:Sapphire by AlInGaN LEDs von Ivanov, A E, Aladov, A V, Chernyakov, A E, Talnishnikh, N A, Zakgeim, A L

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Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds von Shabunina, E. I., Chernyakov, A. E., Ivanov, A. E., Kartashova, A. P., Kuchinsky, V. I., Poloskin, D. S., Talnishnikh, N. A., Shmidt, N. M., Zakgeim, A. L.

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Limiting Energy Capabilities of Powerful AlInGaN LEDs von Zakgeim, A. L., Aladov, A. V., Ivanov, A. E., Talnishnikh, N. A., Chernyakov, A. E.

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Temperature-Dependent Decrease in Efficiency in Power Blue InGaN/GaN LEDs von Shmidt, N. M., Shabunina, E. I., Chernyakov, A. E., Ivanov, A. E., Tal’nishnikh, N. A., Zakgeim, A. L.

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Thermal quantum efficiency droop in blue InGaN/GaN LEDs von Shabunina, E I, Chernyakov, A E, Ivanov, A E, Kartashova, A P, Talnishnikh, N A, Shmidt, N M, Zakgeim, A L

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice von Lundin, W.V., Nikolaev, A.E., Sakharov, A.V., Zavarin, E.E., Valkovskiy, G.A., Yagovkina, M.A., Usov, S.O., Kryzhanovskaya, N.V., Sizov, V.S., Brunkov, P.N., Zakgeim, A.L., Cherniakov, A.E., Cherkashin, N.A., Hytch, M.J., Yakovlev, E.V., Bazarevskiy, D.S., Rozhavskaya, M.M., Tsatsulnikov, A.F.

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Surface control of light-emitting structures based on III-nitrides von Besyulkin, A. I., Kartashova, A. P., Kolmakov, A. G., Krivolapchuk, V. V., Lundin, W. V., Mezdrogina, M. M., Sakharov, A. V., Shmidt, N. M., Sitnikova, A. A., Zakgeim, A. L., Zavarin, E. E., Zolotareva, R. V.

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Micro-EL studying of high power blue LEDs von Onushkin, G. A., Zakgeim, A. L., Zakgeim, D. A., Rozhansky, I. V., Tsatsulnikov, A. F., Lundin, W. V., Sizov, D. S.

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A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy von Zakgeim, A. L., Kuryshev, G. L., Mizerov, M. N., Polovinkin, V. G., Rozhansky, I. V., Chernyakov, A. E.

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Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C von Il’inskaya, N. D., Zakgeim, A. L., Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M., Chernyakov, A. E.

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Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current von Ber, B. Ya, Bogdanova, E. V., Greshnov, A. A., Zakgeim, A. L., Kazanzev, D. Yu, Kartashova, A. P., Pavluchenko, A. S., Chernyakov, A. E., Shabunina, E. I., Shmidt, N. M., Yakimov, E. B.

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Theoretical and experimental study of thermal management in high-power AlInGaN LEDs von Chernyakov, A. E., Zakgeim, A. L., Bulashevich, K. A., Karpov, S. Yu, Smirnov, V. I., Sergeev, V. A.

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High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range von Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Sizov, V. S., Zakgeim, A. L., Chernyakov, A. E., Tsatsul’nikov, A. F.

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Localized states in the active region of blue LEDs related to a system of extended defects von Davydov, D. V., Zakgeim, A. L., Snegov, F. M., Sobolev, M. M., Chernyakov, A. E., Usikov, A. S., Shmidt, N. M.

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Thermal characterization of light-emitting sources of Cree types von Vaskou, A. S., Kononenko, V. K., Niss, V. S., Zakgeim, A. L., Chernyakov, A. E.

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice von LUNDIN, W. V, NIKOLAEV, A. E, ZAKGEIM, A. L, CHERNIAKOV, A. E, CHERKASHIN, N. A, HYTCH, M. J, YAKOVLEV, E. V, BAZAREVSKIY, D. S, ROZHAVSKAYA, M. M, TSATSULNIKOV, A. F, SAKHAROV, A. V, ZAVARIN, E. E, VALKOVSKIY, G. A, YAGOVKINA, M. A, USOV, S. O, KRYZHANOVSKAYA, N. V, SIZOV, V. S, BRUNKOV, P. N

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High-power light-emitting diodes operating in the 1.9 to 2.1-µm spectral range von Danilova, T. N., Zhurtanov, B. E., Zakgeim, A. L., Il’inskaya, N. D., Imenkov, A. N., Saraev, O. N., Sipovskaya, M. A., Sherstnev, V. V., Yakovlev, Yu. P.

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