Single-channel 100 Gbit/s transmission using III–V UTC-PDs for future IEEE 802.15.3d wireless links in the 300 GHz band von Chinni, V.K, Latzel, P, Zégaoui, M, Coinon, C, Wallart, X, Peytavit, E, Lampin, J.F, Engenhardt, K, Szriftgiser, P, Zaknoune, M, Ducournau, G

Volltext

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz von Medjdoub, F., Zegaoui, M., Grimbert, B., Ducatteau, D., Rolland, N., Rolland, P. A.

Volltext

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate von Medjdoub, F., Zegaoui, M., Ducatteau, D., Rolland, N., Rolland, P. A.

Volltext

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers von Di Gioia, G., Frayssinet, E., Samnouni, M., Chinni, V., Mondal, P., Treuttel, J., Wallart, X., Zegaoui, M., Ducournau, G., Roelens, Y., Cordier, Y., Zaknoune, M.

Volltext

GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV von Herbecq, N, Roch-Jeune, I, Linge, A, Grimbert, B, Zegaoui, M, Medjdoub, F

Volltext

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate von MEDJDOUB, F, ZEGAOUI, M, ROLLAND, N

Volltext

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate von Medjdoub, F., Zegaoui, M., Rolland, N., Rolland, P. A.

Volltext

Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band von Kabouche, R., Okada, E., Dogmus, E., Linge, A., Zegaoui, M., Medjdoub, F.

Volltext

Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate von Medjdoub, F., Waldhoff, N., Zegaoui, M., Grimbert, B., Rolland, N., Rolland, P. A.

Volltext

Micro-patterning of LiPON and lithium iron phosphate material deposited onto silicon nanopillars array for lithium ion solid state 3D micro-battery von Lethien, C., Zegaoui, M., Roussel, P., Tilmant, P., Rolland, N., Rolland, P.A.

Volltext

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation von De Santi, C., Meneghini, M., Caria, A., Dogmus, E., Zegaoui, M., Medjdoub, F., Zanoni, E., Meneghesso, G.

Volltext

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz von Medjdoub, F., Tagro, Y., Zegaoui, M., Grimbert, B., Danneville, F., Ducatteau, D., Rolland, N., Rolland, P. A.

Volltext

High dynamic range single channel sampling of wideband RF signals using ultra-fast nanoscale photoconductive switching von Tripon-Canseliet, C, Zegaoui, M, Jestin, G, Coinon, C, Berger, P, Baili, G, Descamps-Mandine, A, Maksimovic, I, Decoster, D, Hodé, J.M, Dolfi, D, Chazelas, J

Volltext

Thermal management of electronic devices by composite materials integrated in silicon von Ollier, Emmanuel, Soupremanien, U., Remondière, V., Dijon, J., Le Poche, H., Seiler, A.L., Lefevre, F., Lips, S., Kinkelin, C., Rolland, N., Rolland, P.A., Zegaoui, M., Lhostis, S., Ancey, P., Descouts, B., Kaplan, Y.

Volltext

A New Low Crosstalk InP Digital Optical Switch Based on Carrier-Induced Effects for 1.55- \mu m Applications von Zegaoui, M., Decoster, D., Harari, J., Magnin, V., Wallart, X., Chazelas, J.

Volltext

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures von ZEGAOUI, M, HARARI, J, CHOUEIB, N, MAGNIN, V, DECOSTER, D

Volltext

2$\,\times\,$2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-$\mu$m Applications von Zegaoui, M., Choueib, N., Harari, J., Decoster, D., Magnin, V., Wallart, X., Chazelas, J.

Volltext

High thermally induced index variations with short response time in InP/GaInAsP/ InP waveguide Schottky diodes von SAADSAOUD, N, ZEGAOUI, M, DECOSTER, D, DOGHECHE, E, WALLART, X, CHAZELAS, J

Volltext

Low-loss InGaAsP/InP submicron optical waveguides fabricated by ICP etching von Dupont, S., Beaurain, A., Miska, P., Zegaoui, M., Vilcot, J.-P., Li, H.W., Constant, M., Decoster, D., Chazelas, J.

Volltext

Optical devices for ultra-compact photonic integrated circuits based on III-V/polymer nanowires von Lauvernier, D, Garidel, S, Zegaoui, M, Vilcot, J P, Harari, J, Magnin, V, Decoster, D

Volltext