A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs von Ge, Ji, Cao, Yuxiong, Wu, Danyu, Su, YongBo, Jin, Zhi, Liu, Xinyu

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An improved model for InP/InGaAs double heterojunction bipolar transistors von Shi, Yuxia, Jin, Zhi, Su, Yongbo, Cao, Yuxiong, Wang, Yan

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A W-band two-stage cascode amplifier with gain of 25.7 dB von 钟英辉 张玉明 张义门 曹玉雄 姚鸿飞 王显泰 吕红亮 刘新宇 金智

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An improved VBIC model for InP DHBTs von Yuxia Shi, Zhi Jin, Yongbo Su, Yuxiong Cao, Yan Wang

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A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain von 姚鸿飞 曹玉雄 吴旦昱 宁晓曦 苏永波 金智

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W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology von 姚鸿飞 王显泰 吴旦昱 苏永波 曹玉雄 葛霁 宁晓曦 金智

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Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs von 钟英辉 王显泰 苏永波 曹玉雄 金智 张玉明 刘新宇

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A Verilog-A large signal model for InP DHBT including thermal effects von 施羽暇 金智 潘志建 苏永波 曹玉雄 王燕

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Ka-band IQ vector modulator employing GaAs HBTs von 曹玉雄 吴旦昱 陈高鹏 金智 刘新宇

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A symbolically defined InP double heterojunction bipolar transistor large-signal model von 曹玉雄 金智 葛霁 苏永波 刘新宇

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Broad-band direct QPSK modulator/demodulator for wireless gigabit communication von Cao, YuXiong, Wu, DanYu, Liu, XinYu, Jin, Zhi

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W-band push-push monolithic frequency doubler in 1-[mu]m InP DHBT technology von Yao, Hongfei, Wang, Xiantai, Wu, Danyu, Su, Yongbo, Cao, Yuxiong, Ge, Ji, Ning, Xiaoxi, Jin, Zhi

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W-band MMIC amplifiers based on 50-nm dual-gate InP HEMT von Hongfei Yao, Yuxiong Cao, Xiantai Wang, Yinghui Zhong, Zhi Jin

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A 20-dB gain W-band InP DHBT power amplifier von Hongfei Yao, Yuxiong Cao, Xiaoxi Ning, Yongbo Su, Zhi Jin

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An 88 nm gate-length In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As InP-based HEMT with f max of 201 GHz von Zhong, Yinghui, Wang, Xiantai, Su, Yongbo, Cao, Yuxiong, Jin, Zhi, Zhang, Yuming, Liu, Xinyu

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APPARATUSES AND METHODS FOR SURFACE CLEANING von XU, Zihao, CAO, Yuxiong, TAO, Ge, XIN, Yiwen

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APPARATUSES AND METHODS FOR SURFACE CLEANING von XU, Zihao, CAO, Yuxiong, TAO, Ge, XIN, Yiwen

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APPARATUSES AND METHODS FOR SURFACE CLEANING von XU, Zihao, CAO, Yuxiong, TAO, Ge, XIN, Yiwen

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An 88 nm gate-length Ino.s3Gao.47As/Ino.s2Alo.48As InP-based HEMT with fmax of 201 GHz von Zhong Yinghui Wang Xiantai SuYongbo Cao Yuxiong Jin Zhi Zhang Yuming Liu Xinyu

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Dual-frequency switchable driving amplifier von CHEN LINHUI, DENG HUIZHONG, CAO YUXIONG, LIU ZHIZHE, TIAN FAN, NIAN JIALE, CHENG SHUAI

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