I–V Characteristics of High-Power Diode Structures with Sharply Asymmetric Injection Ability of the Emitters von Tandoev, A. G., Mnatsakanov, T. T., Yurkov, S. N.

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High-Power Schottky Diodes with a Negative-Differential-Resistance Portion in the I–V Characteristic von Tandoev, A. G., Mnatsakanov, T. T., Yurkov, S. N.

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S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities von Tandoev, A. G., Mnatsakanov, T. T., Yurkov, S. N.

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Multidimensional dU/dT Effect in High-Power Thyristors von Yurkov, S. N., Mnatsakanov, T. T., Tandoev, A. G.

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Experimental verification of a new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structures von Shuman, V B, Mnatsakanov, T T, Levinshtein, M E, Tandoev, A G, Yurkov, S N, Palmour, J W

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Theoretical Analysis of the Effect of dU/dt in 4H–SiC Thyristor Structures von Yurkov, S. N., Mnatsakanov, T. T., Tandoev, A. G.

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Specific features of switch-on processes in high-voltage (18 kV class) optically triggered 4H-SiC thyristors von Mnatsakanov, T T, Yurkov, S N, Levinshtein, M E, Cheng, L, Palmour, J W

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Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors von Yurkov, S N, Mnatsakanov, T T, Levinshtein, M E, Cheng, L, Palmour, J W

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Carrier mobility model for simulation of SiC-based electronic devices von Mnatsakanov, T T, Levinshtein, M E, Pomortseva, L I, Yurkov, S N

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Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors von Yurkov, S. N., Mnatsakanov, T. T., Levinshtein, M. E., Tandoev, A. G., Palmour, J. W.

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Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers von Mnatsakanov, T. T., Tandoev, A. G., Levinshtein, M. E., Yurkov, S. N., Palmour, J. W.

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Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors von Levinshtein, M E, Rumyantsev, S L, Shur, M S, Mnatsakanov, T T, Yurkov, S N, Zhang, Q J, Agarwal, A K, Cheng, L, Palmour, J W

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Specific features of quasineutral carrier transport modes in semiconductors and semiconductor structures von Mnatsakanov, T T, Tandoev, A G, Yurkov, S N, Levinshtein, M E

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dV/dt effect in high-voltage 4H-SiC thyristors von Levinshtein, M E, Ivanov, P A, Mnatsakanov, T T, Yurkov, S N, Agarwal, A K, Palmour, J W

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High voltage SiC diodes with small recovery time von Levinshtein, M.E., Mnatsakanov, T.T., Ivanov, P.A., Palmour, J.W., Rumyantsev, S.L., Singh, R., Yurkov, S.N.

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Switching characteristics of an MOSFET-controlled high-power integrated thyristor von Grekhov, I. V., Yurkov, S. N., Mnatsakanov, T. T., Tandoev, A. G., Kostina, L. S.

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"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes von Levinshtein, M.E., Mnatsakanov, T.T., Ivanov, P., Palmour, J.W., Rumyantsev, S.L., Singh, R., Yurkov, S.N.

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Paradoxes related to electron-hole scattering in junction structures von Mnatsakanov, T. T., Levinshtein, M. E., Tandoev, A. G., Yurkov, S. N., Palmour, J. W.

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Parameters of electron–hole scattering in silicon carbide von Mnatsakanov, T. T., Levinshtein, M. E., Ivanov, P. A., Palmour, J. W., Tandoev, A. G., Yurkov, S. N.

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Universal analytical approximation of the carrier mobility in semiconductors for a wide range of temperatures and doping densities von Mnatsakanov, T. T., Levinshtein, M. E., Pomortseva, L. I., Yurkov, S. N.

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